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SN54LS00J

Texas Instruments

SN54LS00J by Texas Instruments

SN54LS00J by Texas Instruments is a TTL logic gate with 4 functions and 2 inputs. It operates at a supply voltage of 5V, with a propagation delay of 15ns. Ideal for military-grade applications requiring fast signal processing in a compact IN-LINE package style.

Median Price

$11.244

Lifecycle Status

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46

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Arrow

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Component Electronics Inc.

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Forefront Electronics and Design

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AZTECH Wire

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IDEA Electronic Components Group

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Overview

Unlock the power of seamless logic operations with the SN54LS00J by Texas Instruments. Crafted with precision and expertise, this logic gates component offers unparalleled performance and reliability for a wide range of applications. Whether you're designing circuits for industrial control systems or digital electronics projects, this product's fast propagation delay, low power consumption, and durable ceramic package ensure top-notch results every time. Trust in Texas Instruments to deliver quality and innovation, and let the SN54LS00J elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and reliability in various environments.

Propagation Delay At Nominal Supply: 15 ns

Fast propagation delay allows for quick processing of input signals, making it suitable for real-time applications.

No. of Functions: 4

This logic gate offers multiple functions in a single package, saving space and simplifying circuit design.

No. of Inputs: 2

With 2 input channels, this logic gate can process multiple input signals simultaneously, increasing efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and integration into existing systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this logic gate compatible with a wide range of systems.

Load Capacitance (CL): 15 pF

The low load capacitance ensures minimal interference with the input signals, improving overall performance.

Power Supplies (V): 5

Having a 5V power supply ensures stable operation and compatibility with standard power sources.

No. of Terminals: 14

The ample number of terminals provide flexibility in circuit connections and configurations.

Package Style (Meter): IN-LINE

The in-line package style allows for easy installation and space-efficient layout in a circuit design.

Maximum I (ol): 0.4 Amp

The high output current capacity of 0.4 Amps allows for driving larger loads, increasing versatility.

Propagation Delay (tpd): 15 ns

The consistent propagation delay of 15ns ensures reliable and predictable operation in various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range of 125°C makes it suitable for harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows for use in extreme cold conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and connections to suit different design requirements.

Maximum Seated Height: 5.08 mm

The low maximum seated height allows for compact and space-saving installation in tight spaces.

Width: 7.62 mm

The compact width of 7.62mm enables easy integration into dense circuit layouts and designs.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5V, this logic gate can operate efficiently even at lower power levels.

Length: 19.94 mm

The length of 19.94mm provides a balance between size and functionality, making it suitable for various applications.

Temperature Grade: MILITARY

Military-grade temperature rating ensures reliable operation in demanding environments with wide temperature fluctuations.

Technology: TTL

Using TTL technology ensures compatibility with other TTL-based components and systems, simplifying integration.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure and stable mounting on circuit boards for long-term use.

Packing Method: TUBE

The tube packaging method ensures safe transportation and storage of the logic gate, protecting it from damage.

Terminal Pitch: 2.54 mm

The standard terminal pitch of 2.54mm facilitates easy connection and mounting on standard PCB layouts.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this logic gate can handle slightly higher voltage levels without malfunctioning.

Maximum Power Supply Current (ICC): 4.4 mA

The maximum power supply current of 4.4mA ensures efficient power usage and minimizes energy consumption.

Technical Specifications

Logic Gates SN54LS00J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

LG-MAX

Family:

LS

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.94 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

.4 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

4.4 mA

Propagation Delay At Nominal Supply:

15 ns

Propagation Delay (tpd):

15 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54LS00J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-097-2455, 5962010972455, 5962-00-543-0980, 5962005430980, 5962-01-025-8598, 5962010258598, 5962-01-263-9090, 5962012639090, 5962-01-167-7875, 5962011677875, 5962-01-329-9261, 5962013299261

NIIN

010972455, 005430980, 010258598, 012639090, 011677875, 013299261

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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