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SN54HC682J

Texas Instruments

SN54HC682J by Texas Instruments

SN54HC682J by Texas Instruments is an 8-bit digital arithmetic circuit with a supply voltage of 5V. It has a propagation delay of 413ns and operates in temperatures ranging from -55°C to 125°C. This CMOS technology component is commonly used in military-grade applications requiring high-speed arithmetic calculations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,760 parts In-Stock

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Digiode

USA . 2,869 parts In-Stock

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Andel Nordic

Denmark . 1,916 parts In-Stock

1+ parts

$8.255

100+ parts

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$7.925

10k+ parts

$7.925

1,916

$8.255

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$7.925

$7.925

AZTECH Wire

Italy . 564 parts In-Stock

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$17.141

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$17.141

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Parana Technologies

USA . 1,040 parts In-Stock

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$19.953

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$19.898

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$19.953

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$19.898

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One Stop Electronics

USA . 1,346 parts In-Stock

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$21.000

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$21.000

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DigiPath Technology Company

USA . 555 parts In-Stock

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$21.971

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$20.213

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555

$21.971

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ChromeModa Solutions

Germany . 5,071 parts In-Stock

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$22.419

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$18.384

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$22.419

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IDEA Electronic Components Group

UK . 2,172 parts In-Stock

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$22.419

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$21.298

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$20.177

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Corphita

USA . 4,208 parts In-Stock

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Overview

Unlock the power of precision and reliability with the SN54HC682J by Texas Instruments, a top-of-the-line digital arithmetic circuit designed for optimal performance. Crafted with high-quality materials and cutting-edge technology, this product offers unparalleled value and benefits to customers in various applications. From military-grade operations to industrial automation, this versatile component guarantees seamless functionality and efficiency. Trust Texas Instruments for superior quality and innovation in every circuit.

Feature Benefit Bullets

No. of Bits: 8

Having 8 bits allows for more precision and accuracy in calculations, making this product suitable for applications requiring complex arithmetic operations.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is a common standard in many electronic devices, ensuring compatibility and ease of integration into existing systems.

Propagation Delay (tpd): 413 ns

The low propagation delay of 413 ns allows for fast and efficient calculations, making this product ideal for high-speed applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product is suitable for use in harsh environments or industrial applications where temperature fluctuations may occur.

Technology: CMOS

The CMOS technology used in this product provides low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making it a reliable choice for various applications.

Technical Specifications

Digital Arithmetic Circuits SN54HC682J attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

WITH PULL-UP RESISTORS ON B INPUTS; WITH A = B & A > B OUTPUTS

Family:

HC/UH

JESD-30 Code:

R-GDIP-T20

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Propagation Delay (tpd):

413 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Arithmetic Circuits

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SN54HC682J Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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