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PMS430E315FZR

Texas Instruments

PMS430E315FZR by Texas Instruments

PMS430E315FZR by Texas Instruments is a 16-bit microcontroller with 68 terminals, operating at speeds up to 3.3 MHz. Ideal for industrial applications, it features ADC channels, ROM programmability, and operates in temperatures ranging from -40°C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,988 parts In-Stock

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Digiode

USA . 1,797 parts In-Stock

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1,797

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Distributors (Availability)

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AZTECH Wire

Italy . 656 parts In-Stock

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$11.491

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656

$11.491

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One Stop Electronics

USA . 836 parts In-Stock

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$19.000

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836

$19.000

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Parana Technologies

USA . 788 parts In-Stock

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$60.524

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788

$60.524

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DigiPath Technology Company

USA . 439 parts In-Stock

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$66.644

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439

$66.644

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ChromeModa Solutions

Germany . 3,517 parts In-Stock

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$68.004

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$55.763

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3,517

$68.004

$55.763

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IDEA Electronic Components Group

UK . 1,131 parts In-Stock

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$68.004

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$64.604

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$61.204

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1,131

$68.004

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$61.204

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Corphita

USA . 2,189 parts In-Stock

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Overview

Unlock limitless possibilities with the Texas Instruments PMS430E315FZR microcontroller. Crafted with precision and excellence by a trusted manufacturer, this device is designed to elevate your projects to new heights. Perfect for a wide range of applications, this microcontroller offers unparalleled value, benefits, and advantages to customers looking to innovate and create. Experience the power and reliability of Texas Instruments in every project with the PMS430E315FZR.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides excellent durability and protection, ensuring long-lasting performance in various environmental conditions.

Surface Mount: YES

Makes installation and mounting of the microcontroller easy and convenient.

Maximum Supply Voltage: 5.5 V

Allows for a wide range of input voltage, providing flexibility in power supply options.

Bit Size: 16

Offers high processing capabilities and enhanced performance for complex tasks.

No. of Terminals: 68

Provides ample connectivity options for interfacing with other devices and components.

Package Style (Meter): CHIP CARRIER

Compact design with efficient heat dissipation for improved reliability and performance.

Maximum Clock Frequency: 3.3 MHz

Ensures fast data processing and execution speed for smooth operation.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring reliable operation under tough conditions.

ROM Programmability: UVPROM

Allows for easy and secure programming of read-only memory, enhancing flexibility in customization.

Technology: CMOS

Utilizes low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Microcontrollers PMS430E315FZR attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Maximum Clock Frequency:

3.3 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-CQCC-J68

Length:

23.94 mm

No. of I/O Lines:

14

No. of Terminals:

68

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

ROM Programmability:

UVPROM

Maximum Seated Height:

4.57 mm

Speed:

3.3 rpm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

23.94 mm

Peripheral IC Type:

Trade Compliance

PMS430E315FZR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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