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PMS430E313FZ

Texas Instruments

PMS430E313FZ by Texas Instruments

PMS430E313FZ by Texas Instruments is a 16-bit microcontroller with 256 bytes of RAM and 8192 ROM words. It operates b/w -40 to 85°C, has a clock frequency of 3.3 MHz, and features an ADC for industrial applications requiring high-speed processing in a compact chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,111 parts In-Stock

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Digiode

USA . 2,098 parts In-Stock

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2,098

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One Stop Electronics

USA . 1,382 parts In-Stock

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$6.000

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$6.000

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AZTECH Wire

Italy . 741 parts In-Stock

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$14.489

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741

$14.489

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Parana Technologies

USA . 1,866 parts In-Stock

1+ parts

$33.065

100+ parts

$3,070.613

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$29.759

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1,866

$33.065

$3,070.613

$29.759

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DigiPath Technology Company

USA . 2,074 parts In-Stock

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$36.409

100+ parts

$33.496

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2,074

$36.409

$33.496

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ChromeModa Solutions

Germany . 1,799 parts In-Stock

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$37.152

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$30.465

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1,799

$37.152

$30.465

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IDEA Electronic Components Group

UK . 1,372 parts In-Stock

1+ parts

$37.152

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$35.294

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$33.437

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1,372

$37.152

$35.294

$33.437

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Corphita

USA . 1,690 parts In-Stock

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Assy Fe

Spain . 3 parts In-Stock

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Overview

Discover the innovative PMS430E313FZ microcontroller by Texas Instruments, known for its top-notch quality and reliability. With a maximum clock frequency of 3.3 MHz and 256 RAM bytes, this chip carrier package offers endless possibilities for your industrial projects. From temperature control systems to automation applications, the PMS430E313FZ delivers exceptional performance and efficiency. Trust in Texas Instruments to provide cutting-edge technology that exceeds your expectations. Elevate your designs with this powerful microcontroller and unlock a world of opportunities.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and reliability for the product, making it suitable for harsh industrial environments.

Maximum Supply Voltage: 5.5 V

Allows for a higher supply voltage which can be beneficial for certain applications requiring more power.

Bit Size: 16

Having a 16-bit architecture allows for more complex operations and calculations to be performed efficiently.

ADC Channels: YES

Having ADC channels allows for analog signals to be converted to digital, providing flexibility in interfacing with sensors and other analog devices.

ROM Words: 8192

With a large ROM capacity, the microcontroller can store a significant amount of program data, enabling the execution of more complex algorithms.

Maximum Clock Frequency: 3.3 MHz

The high clock frequency allows for fast execution of instructions, making the microcontroller suitable for tasks requiring quick response times.

RAM Bytes: 256

Having 256 bytes of RAM enables efficient data storage and manipulation during program execution.

Technical Specifications

Microcontrollers PMS430E313FZ attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Maximum Clock Frequency:

3.3 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-CQCC-J68

Length:

23.94 mm

No. of I/O Lines:

14

No. of Terminals:

68

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LDCC68,1.0SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

3/5

Qualification:

Not Qualified

RAM Bytes:

256

ROM Words:

8192

ROM Programmability:

UVPROM

Maximum Seated Height:

4.57 mm

Speed:

3.3 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

23.94 mm

Peripheral IC Type:

Trade Compliance

PMS430E313FZ Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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