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LMC555CTP

Texas Instruments

LMC555CTP by Texas Instruments

LMC555CTP by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating at a supply voltage range of 1.5V to 12V. It offers a max output frequency of 3 GHz and can withstand temperatures from -40°C to 85°C. Ideal for industrial applications requiring precise pulse generation in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,231 parts In-Stock

1+ parts

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5,231

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Digiode

USA . 3,918 parts In-Stock

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3,918

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Anansix

USA . 1,128 parts In-Stock

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1,128

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,000 parts In-Stock

1+ parts

$3.500

100+ parts

-

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1,000

$3.500

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Parana Technologies

USA . 1,764 parts In-Stock

1+ parts

$4.039

100+ parts

-

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$4.502

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1,764

$4.039

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$4.502

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DigiPath Technology Company

USA . 726 parts In-Stock

1+ parts

$4.447

100+ parts

$4.091

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-

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726

$4.447

$4.091

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ChromeModa Solutions

Germany . 6,186 parts In-Stock

1+ parts

$4.538

100+ parts

$3.721

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6,186

$4.538

$3.721

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IDEA Electronic Components Group

UK . 170 parts In-Stock

1+ parts

$4.538

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$4.084

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170

$4.538

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$4.084

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AZTECH Wire

Italy . 279 parts In-Stock

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$12.690

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279

$12.690

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Corphita

USA . 2,217 parts In-Stock

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2,217

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the LMC555CTP, a versatile Analog Waveform Generation IC that offers endless possibilities. Whether you're designing a precision timing circuit or creating complex waveforms, this IC delivers exceptional performance and accuracy. With a wide operating temperature range and compact package design, the LMC555CTP is perfect for industrial applications where reliability is key. Trust Texas Instruments to provide innovative solutions for your analog waveform generation needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to environmental factors, ensuring longevity and reliability of the product.

Surface Mount: YES

Surface mount capability allows for easier integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage (Vsup): 5 V

Operating at a nominal supply voltage of 5V provides a balance between power efficiency and performance.

Maximum Output Frequency: 3 GHz

Capable of generating waveforms at high frequencies up to 3 GHz, making it suitable for applications requiring high-speed signal generation.

No. of Terminals: 8

Having 8 terminals allows for versatile connectivity options and compatibility with different circuit designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand elevated temperatures in industrial environments without compromising performance.

Technology: CMOS

Utilizing CMOS technology enables efficient signal generation while minimizing power consumption, making it ideal for battery-operated devices.

Technical Specifications

Analog Waveform Generation LMC555CTP attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PBGA-B8

Length:

1.412 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Frequency:

3 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width (mm):

1.387 mm

Trade Compliance

LMC555CTP Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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