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DM74S289N/A+

Texas Instruments

DM74S289N/A+ by Texas Instruments

DM74S289N/A+ by Texas Instruments is a 16x4 SRAM with 35ns access time, operating at 5V. It features open-collector outputs and operates in asynchronous mode. Ideal for applications requiring fast parallel memory access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,454 parts In-Stock

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Digiode

USA . 657 parts In-Stock

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Anansix

USA . 78 parts In-Stock

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Native Components

USA . 95 parts In-Stock

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$0.110

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$0.106

95

$0.110

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$0.106

Northwest PG Solutions

USA . 908 parts In-Stock

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$0.121

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$0.107

908

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$0.107

One Stop Electronics

USA . 396 parts In-Stock

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$4.000

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$4.000

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Parana Technologies

USA . 494 parts In-Stock

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$4.795

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$5.303

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494

$4.795

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$5.303

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DigiPath Technology Company

USA . 1,367 parts In-Stock

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$5.280

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$4.858

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1,367

$5.280

$4.858

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ChromeModa Solutions

Germany . 4,401 parts In-Stock

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$5.388

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$4.418

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$5.388

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IDEA Electronic Components Group

UK . 182 parts In-Stock

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$5.388

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$4.849

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182

$5.388

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$4.849

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AZTECH Wire

Italy . 224 parts In-Stock

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$15.993

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Corphita

USA . 2,550 parts In-Stock

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Overview

Unlock the power of reliable data storage with the DM74S289N/A+ from Texas Instruments. This high-quality SRAM device offers unparalleled performance and durability, making it perfect for a wide range of applications. With a focus on value and efficiency, Texas Instruments ensures that customers receive top-notch products that deliver exceptional results. Upgrade your technology with this innovative solution and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, making it suitable for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent operation of the memory, making it versatile and efficient.

Nominal Supply Voltage / Vsup (V): 5

Operates on a standard 5V supply voltage, making it compatible with many systems.

No. of Words: 16 words

With 16 words capacity, this SRAM can store a decent amount of data for various applications.

Technology: TTL

Uses TTL technology for reliable and fast data transfer, ensuring data integrity and speed.

Maximum Access Time: 35 ns

With a fast access time of 35 ns, this SRAM can quickly retrieve data, making it suitable for high-speed applications.

Technical Specifications

SRAM DM74S289N/A+ attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X4

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Sub-Category:

SRAMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

DM74S289N/A+ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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