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CLC109ALC

Texas Instruments

CLC109ALC by Texas Instruments

The Texas Instruments CLC109ALC is a buffer amplifier with 270 MHz bandwidth, 5000 uV input offset voltage, and 4 uA average bias current. Ideal for military applications due to its -55 to 125 °C operating temperature range and BIPOLAR technology. Suitable for high-speed signal buffering in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,775 parts In-Stock

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Digiode

USA . 2,561 parts In-Stock

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Anansix

USA . 320 parts In-Stock

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320

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Distributors (Availability)

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One Stop Electronics

USA . 144 parts In-Stock

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$0.410

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144

$0.410

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Northwest PG Solutions

USA . 2,146 parts In-Stock

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$3.558

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$3.558

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Parana Technologies

USA . 1,785 parts In-Stock

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$3.614

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$4.128

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$3.614

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$4.128

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DigiPath Technology Company

USA . 1,595 parts In-Stock

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$3.980

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1,595

$3.980

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ChromeModa Solutions

Germany . 3,683 parts In-Stock

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$4.061

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$3.330

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$4.061

$3.330

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IDEA Electronic Components Group

UK . 198 parts In-Stock

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$4.061

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$3.655

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AZTECH Wire

Italy . 659 parts In-Stock

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$17.671

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659

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Corphita

USA . 3,452 parts In-Stock

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Native Components

USA . 760 parts In-Stock

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$3.138

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760

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Overview

Experience high-quality signal buffering with the CLC109ALC from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch buffer amplifiers that provide exceptional performance and reliability. Whether you're working on industrial applications or military-grade projects, this versatile chip is designed to meet your needs. With a wide operating temperature range and superior slew rate, the CLC109ALC ensures optimal signal integrity and precision. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum Input Offset Voltage: 5000 uV

Low offset voltage ensures accurate signal processing and minimal distortion in the output signal.

Maximum Average Bias Current (IIB): 4 uA

Low bias current helps in reducing power consumption and increasing efficiency of the amplifier.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage provides consistent performance of the amplifier.

Nominal Bandwidth (3dB): 270 MHz

High bandwidth allows for the amplification of a wide range of frequencies with minimal distortion.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the amplifier suitable for various environments and applications.

Technical Specifications

Buffer Amplifiers CLC109ALC attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

270 MHz

Minimum Slew Rate:

250 V/us

Nominal Slew Rate:

350 V/us

Input Offset Voltage Limit:

5 mV

Peak Bias Current:

4 uA

Operational Characteristics

Maximum Supply Current:

4 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-7 V

Lowest Output Current:

40 mA

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Total Terminals:

4

Terminal Position:

Upper

Terminal Style:

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

X-XUUC-N4

Packaging and Shipping

Package Code:

DIE

Package Style:

Uncased Chip

Trade Compliance

CLC109ALC Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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