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CLC109AJE

Texas Instruments

CLC109AJE by Texas Instruments

CLC109AJE by Texas Instruments is a buffer amplifier with 8 terminals, operating at -40 to 85 °C. It has a max supply voltage of 7V and min slew rate of 250 V/us. Ideal for applications requiring high-speed signal buffering in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,812 parts In-Stock

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Digiode

USA . 4,109 parts In-Stock

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4,109

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Anansix

USA . 789 parts In-Stock

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789

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Native Components

USA . 499 parts In-Stock

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$0.606

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499

$0.606

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Northwest PG Solutions

USA . 1,047 parts In-Stock

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$0.667

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1,047

$0.667

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Parana Technologies

USA . 262 parts In-Stock

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$2.310

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$2.810

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DigiPath Technology Company

USA . 165 parts In-Stock

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$2.543

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$2.340

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165

$2.543

$2.340

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ChromeModa Solutions

Germany . 1,895 parts In-Stock

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$2.595

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$2.128

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$2.595

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IDEA Electronic Components Group

UK . 595 parts In-Stock

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$2.595

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$2.336

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595

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One Stop Electronics

USA . 649 parts In-Stock

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$3.410

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649

$3.410

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AZTECH Wire

Italy . 769 parts In-Stock

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$12.416

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Alle Elektronik GmbH

Germany . 4,416 parts In-Stock

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Corphita

USA . 493 parts In-Stock

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Overview

Elevate your electronic designs with the top-notch quality of the Texas Instruments CLC109AJE buffer amplifier. Crafted by a trusted manufacturer, this versatile component offers impeccable performance and reliability for a wide range of applications. With a sleek rectangular package body and impressive slew rate, this amplifier is sure to exceed your expectations. Experience the value and benefits of the CLC109AJE, from its low bias current to its high operating temperature range. Trust Texas Instruments to deliver cutting-edge technology that amplifies your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, making the amplifier long-lasting and reliable.

Maximum Average Bias Current (IIB): 4 uA

Low bias current ensures minimal power consumption and stable operation over time.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is common and compatible with many electronic systems, providing versatility.

Minimum Slew Rate: 250 V/us

Fast slew rate enables quick response time and precise signal amplification.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environmental conditions without overheating.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise, making it suitable for high-performance applications.

Amplifier Type: BUFFER

Buffer amplifiers provide impedance matching and signal isolation, ideal for signal processing and transmission.

Nominal Slow Rate: 350 V/us

Higher slew rate compared to minimum value ensures even faster response time and signal processing capabilities.

Minimum Output Current: 0.04 A

Capable of delivering a minimum output current of 0.04A, making it suitable for driving various loads and applications.

Technical Specifications

Buffer Amplifiers CLC109AJE attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Minimum Slew Rate:

250 V/us

Nominal Slew Rate:

350 V/us

Peak Bias Current:

4 uA

Maximum Bias Current (IIB) @25 °C:

4 uA

Operational Characteristics

Maximum Supply Current:

4 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-7 V

Lowest Output Current:

40 mA

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Total Terminals:

8

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Shape:

Trade Compliance

CLC109AJE Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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