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P82B715PN

NXP Semiconductors

P82B715PN by NXP Semiconductors

The NXP Semiconductors P82B715PN is an 8-terminal BUFFER amplifier with a supply voltage of 5V, suitable for INDUSTRIAL applications. It has a max operating temperature of 85°C and a package style of IN-LINE, making it ideal for various electronic systems requiring signal buffering and amplification.

Median Price

$1.609

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Nova Conductors

Japan . 97 parts In-Stock

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Digiode

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Infinite Electronics LLP

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Anansix

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Resion

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ComSIT Distribution GmbH

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ComSIT USA

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Manoshevitz Elec. Sales

Israel . 27 parts In-Stock

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Rebound Electronics

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J & M Industries LLC

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Fibra_Brandt Electronic GMBH

Germany . 12 parts In-Stock

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Halfin

Belgium . 8 parts In-Stock

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Cogito LLC

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LWI Electronics Inc

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Inventory MP

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Bristol Electronics

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LittleDiode

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Ampacity Inc.

Singapore . 1,627 parts In-Stock

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Continental Prestige Electronics

USA . 5,264 parts In-Stock

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Argo Parts USA

USA . 3,594 parts In-Stock

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Semicontronic

India . 1,272 parts In-Stock

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$3.410

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Corohmni

South Africa . 785 parts In-Stock

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One Stop Electronics

USA . 1,075 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

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AZTECH Wire

Italy . 856 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 300 parts In-Stock

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Kepictronics

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Perfect Parts

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Overview

Unleash the power of seamless signal buffering with the P82B715PN by NXP Semiconductors. Crafted with precision and expertise, this buffer amplifier is a game-changer in its category, offering unmatched reliability and performance. Whether you're looking to enhance communication systems, drive LED displays, or optimize sensor interfaces, this versatile product is your ultimate solution. Experience the value of superior quality and efficiency with the P82B715PN, where innovation meets excellence. Elevate your projects to new heights with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and resistance to environmental factors, making the product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is common and easily accessible, which makes it compatible with a wide range of power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this buffer amplifier can function effectively in various environments without overheating.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish provides excellent conductivity and corrosion resistance, ensuring stable and reliable connections for optimal performance.

Amplifier Type: BUFFER

Being a buffer amplifier, this product is designed to accurately replicate input signals without loading the source, making it ideal for signal conditioning and impedance matching applications.

Technical Specifications

Buffer Amplifiers P82B715PN attributes and parameters. Explore more Buffer Amplifiers devices from NXP Semiconductors

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

1

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.374 in (9.5 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.165 in (4.2 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

P82B715PN Amplifiers trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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