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CD74HCT08ME4

Texas Instruments

CD74HCT08ME4 by Texas Instruments

CD74HCT08ME4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage of 5V, has a propagation delay of 38ns, and can handle a load capacitance of 50pF. This small outline package is ideal for military-grade applications requiring fast signal processing.

Median Price

$0.721

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 465 parts In-Stock

1+ parts

$1.080

100+ parts

$0.752

1k+ parts

$0.490

10k+ parts

$0.418

465

$1.080

$0.752

$0.490

$0.418

Rochester

USA . 1,022 parts In-Stock

1+ parts

-

100+ parts

$0.694

1k+ parts

$0.576

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$0.514

1,022

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$0.694

$0.576

$0.514

Verical

USA . 1,022 parts In-Stock

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-

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$0.721

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$0.642

1,022

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-

$0.721

$0.642

Distributors (In-Stock)

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Digiode

USA . 1,051 parts In-Stock

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$0.428

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Vyrian

USA . 3,521 parts In-Stock

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Native Components

USA . 87 parts In-Stock

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$0.145

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$0.139

87

$0.145

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$0.139

Northwest PG Solutions

USA . 669 parts In-Stock

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$0.159

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$0.140

669

$0.159

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$0.140

Corphita

USA . 2,851 parts In-Stock

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$0.406

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$0.406

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Parana Technologies

USA . 60 parts In-Stock

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$17.371

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$17.577

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60

$17.371

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$17.577

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ChromeModa Solutions

Germany . 1,804 parts In-Stock

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$19.518

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$16.005

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$19.518

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IDEA Electronic Components Group

UK . 528 parts In-Stock

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$19.518

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$18.542

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$17.566

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$19.518

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Microchip USA

USA . 3,402 parts In-Stock

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Perfect Parts

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DigiPath Technology Company

USA . 928 parts In-Stock

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$17.597

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Overview

Elevate your electronic projects with the CD74HCT08ME4 logic gates from Texas Instruments. Designed with precision and reliability in mind, this versatile component boasts a multitude of applications in digital circuit design. From enhancing signal processing to improving data transmission, this logic gate offers unmatched value and performance. Trust in Texas Instruments' renowned expertise in semiconductor manufacturing to deliver a quality product that will exceed your expectations. Upgrade your projects today with the CD74HCT08ME4 and experience the superior benefits and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the logic gates, making it suitable for various applications.

Propagation Delay At Nominal Supply: 38 ns

Low propagation delay ensures quick processing of signals, making this product efficient for high-speed applications.

No. of Functions: 4

Having 4 functions in a single package provides versatility and allows for multiple logic operations to be performed.

No. of Inputs: 2

With 2 inputs, this logic gate can perform basic logical operations efficiently.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes it compatible with most electronic devices and systems.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliability and stability in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates CD74HCT08ME4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

38 ns

Propagation Delay (tpd):

38 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

CD74HCT08ME4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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