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BQ27510DRZT-G1

Texas Instruments

BQ27510DRZT-G1 by Texas Instruments

BQ27510DRZT-G1 by Texas Instruments is a power management IC with a nominal voltage of 3.6V. It has a small outline, very thin profile package style and can operate in temperatures ranging from -40°C to 85°C. This IC is commonly used in industrial applications for power supply management circuits.

Median Price

$6.580

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,685 parts In-Stock

1+ parts

$4.330

100+ parts

$4.240

1k+ parts

$4.160

10k+ parts

-

10,685

$4.330

$4.240

$4.160

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DigiKey

USA . 75 parts In-Stock

1+ parts

$8.830

100+ parts

$6.372

1k+ parts

$5.338

10k+ parts

$5.202

75

$8.830

$6.372

$5.338

$5.202

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$6.916

100+ parts

-

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19

$6.916

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Digiode

USA . 1,635 parts In-Stock

1+ parts

$10.355

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1,635

$10.355

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Chip Stock

USA . 27,580 parts In-Stock

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27,580

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Vyrian

USA . 8,665 parts In-Stock

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8,665

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VNN

France . 7,163 parts In-Stock

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7,163

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Ashlea Components Ltd

UK . 25 parts In-Stock

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25

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Semi Source

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,433 parts In-Stock

1+ parts

$3.356

100+ parts

-

1k+ parts

$3.881

10k+ parts

-

1,433

$3.356

-

$3.881

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DigiPath Technology Company

USA . 1,352 parts In-Stock

1+ parts

$3.696

100+ parts

$3.400

1k+ parts

-

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1,352

$3.696

$3.400

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IDEA Electronic Components Group

UK . 1,844 parts In-Stock

1+ parts

$3.771

100+ parts

-

1k+ parts

$3.394

10k+ parts

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1,844

$3.771

-

$3.394

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ChromeModa Solutions

Germany . 610 parts In-Stock

1+ parts

$3.771

100+ parts

$3.092

1k+ parts

-

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610

$3.771

$3.092

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Component Stockers USA

USA . 157 parts In-Stock

1+ parts

$9.080

100+ parts

$6.790

1k+ parts

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157

$9.080

$6.790

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Ampacity Inc.

Singapore . 97 parts In-Stock

1+ parts

$9.270

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97

$9.270

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Corphita

USA . 3,912 parts In-Stock

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$9.810

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3,912

$9.810

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AZTECH Wire

Italy . 614 parts In-Stock

1+ parts

$13.900

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614

$13.900

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Lixinc

USA . 10,099 parts In-Stock

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10,099

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Microchip USA

USA . 484 parts In-Stock

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484

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Perfect Parts

USA . 286 parts In-Stock

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286

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Overview

Enhance your power management capabilities with the BQ27510DRZT-G1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. The BQ27510DRZT-G1 falls under the Power Management ICs category, offering unparalleled efficiency and performance. With its small outline and very thin profile package style, this IC is perfect for space-constrained applications. Its wide operating temperature range allows it to withstand extreme conditions, making it ideal for industrial use. Upgrade your power management system today with the BQ27510DRZT-G1 and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - The use of plastic/epoxy material in the package body ensures durability and resistance against harsh environmental conditions, making it suitable for various applications.

Surface Mount

YES - The surface-mount feature enables easy and efficient assembly onto circuit boards, saving time and effort during manufacturing processes.

No. of Functions

1 - With a single function, this power management IC simplifies circuit design and provides a cost-effective solution for power management requirements.

Package Shape

RECTANGULAR - The rectangular package shape offers compatibility with standard PCB designs and facilitates space-efficient integration within electronic systems.

Nominal Supply Voltage (Vsup)

3.6 V - The 3.6 V nominal supply voltage ensures compatibility with a wide range of power sources, enabling flexibility in system design.

No. of Terminals

12 - The 12 terminals provide sufficient connectivity options for connecting the IC to other components, enhancing versatility in circuit configurations.

Package Style (Meter)

SMALL OUTLINE, VERY THIN PROFILE - The small outline and very thin profile of the package style allow for compact designs, ideal for applications with limited space constraints.

Maximum Operating Temperature

85 °C - The high maximum operating temperature of 85°C ensures reliable performance even in demanding thermal conditions, enhancing the product's longevity.

Minimum Operating Temperature

40 °C - The low minimum operating temperature of -40°C makes the power management IC suitable for operating in extreme cold environments without performance degradation.

Terminal Finish

NICKEL PALLADIUM GOLD - The nickel palladium gold terminal finish ensures excellent conductivity, corrosion resistance, and solderability, ensuring reliable connections and extended product lifespan.

Terminal Position

DUAL - The dual terminal position offers flexibility in board layout and allows for multiple connection possibilities, optimizing the integration of the IC into various circuit designs.

Maximum Seated Height

1 mm - The low maximum seated height allows for a compact profile, enabling the power management IC to be efficiently incorporated into space-constrained applications.

Width (mm)

2.5 mm - The compact width of 2.5 mm contributes to the IC's space-saving design, providing more compatibility options in compact electronic devices.

Other IC type

POWER SUPPLY MANAGEMENT CIRCUIT - This power management IC specifically caters to power supply management applications, ensuring efficient and reliable power delivery to connected devices.

Minimum Supply Voltage (Vsup)

2.7 V - The minimum supply voltage requirement of 2.7 V enables compatibility with low-power sources, making it suitable for energy-efficient systems.

Maximum Time At Peak Reflow Temperature (s)

30 - The maximum time at peak reflow temperature ensures proper thermal management during the manufacturing process, reducing the risk of damage to the IC.

Peak Reflow Temperature °C

260 - The high peak reflow temperature capability of 260°C ensures reliable soldering during assembly, enhancing the overall quality and reliability of the product.

Length

4 mm - The compact length of 4 mm contributes to the IC's space-saving design, making it suitable for compact electronic devices or applications with limited board space.

Temperature Grade

INDUSTRIAL - The industrial temperature grade certification ensures optimal performance and reliability within industrial settings, where temperature variations might occur.

No. of Channels

1 - The single channel configuration simplifies circuit design and allows for precise power management in various applications.

Terminal Form

NO LEAD - The no-lead terminal form provides compatibility with lead-free soldering processes, conforming to environmentally-friendly manufacturing standards.

Terminal Pitch

0.4 mm - The small terminal pitch of 0.4 mm allows for high-density mounting and integration, enabling advancements in miniaturization and PCB design.

Moisture Sensitivity Level (MSL)

2 - The moisture sensitivity level 2 ensures proper handling and storage procedures, minimizing the risk of moisture-related damage during production and storage.

Maximum Supply Voltage (Vsup)

5.5 V - The high maximum supply voltage capability of 5.5 V provides flexibility in voltage input, accommodating a wide range of power sources.

Technical Specifications

Power Management ICs BQ27510DRZT-G1 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-N12

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

12

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2.5 mm

Trade Compliance

BQ27510DRZT-G1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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