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AFE1203E

Texas Instruments

AFE1203E by Texas Instruments

AFE1203E by Texas Instruments is a digital SLIC telecom IC with 48 terminals, operating at 2.37 Mbps data rate. It has a package size of 7.5mm x 15.875mm, suitable for industrial temperature range (-40 to 85 °C). This CMOS technology device supports power supplies of 3.3V and 5V, making it ideal for digital transmission interfaces in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 3,132 parts In-Stock

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Digiode

USA . 2,035 parts In-Stock

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Vyrian

USA . 1,930 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,632 parts In-Stock

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Native Components

USA . 554 parts In-Stock

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$0.137

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$0.131

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Northwest PG Solutions

USA . 1,154 parts In-Stock

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$0.150

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$0.133

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Parana Technologies

USA . 1,475 parts In-Stock

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$11.113

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$11.569

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$11.113

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DigiPath Technology Company

USA . 431 parts In-Stock

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$12.237

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$11.258

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$12.237

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ChromeModa Solutions

Germany . 6,894 parts In-Stock

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$12.487

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$10.239

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IDEA Electronic Components Group

UK . 2,107 parts In-Stock

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$12.487

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$11.863

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$11.238

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AZTECH Wire

Italy . 506 parts In-Stock

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$12.996

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One Stop Electronics

USA . 2,020 parts In-Stock

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$869.000

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A-Z Elektronik GmbH

Germany . 6,778 parts In-Stock

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Corphita

USA . 5,599 parts In-Stock

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Kepictronics

USA . 4,550 parts In-Stock

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GreenTree Electronics

Israel . 1,632 parts In-Stock

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Authorized Procurement Solutions

USA . 1,400 parts In-Stock

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Overview

Unlock the power of seamless digital data transmission with the AFE1203E by Texas Instruments. Designed with precision and expertise, this innovative device offers unmatched quality and reliability. Ideal for a wide range of applications in the digital transmission interfaces category, this product provides customers with unparalleled value, benefits, and advantages. Experience enhanced performance and efficiency with the AFE1203E, setting new standards in the industry. Elevate your projects to new heights with Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures that the product is lightweight and durable, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

No. of Terminals: 48

Having 48 terminals provides flexibility in connecting to various other components and peripherals, enhancing the product's versatility.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the product can withstand harsh environmental conditions, increasing its reliability and longevity.

Technology: CMOS

Utilizing CMOS technology results in low power consumption and high noise immunity, making the product energy-efficient and reliable for digital transmission interfaces.

Data Rate: 2.37 Mbps

The high data rate of 2.37 Mbps ensures fast and efficient transmission of digital data, making the product suitable for high-speed communication applications.

Technical Specifications

Digital Transmission Interfaces AFE1203E attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

2.37 Mbps

JESD-30 Code:

R-PDSO-G48

Length:

15.875 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

AFE1203E Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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