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AFE1103EG4

Texas Instruments

AFE1103EG4 by Texas Instruments

AFE1103EG4 by Texas Instruments is a digital transmission interface IC with 48 terminals, operating at temperatures from -40 to 85°C. It features a CMOS technology, supports data rates up to 1.168 Mbps, and has supply voltages of 3.3V and 5V. Ideal for industrial telecom applications requiring high-speed digital signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,784 parts In-Stock

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Digiode

USA . 2,994 parts In-Stock

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2,994

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AZTECH Wire

Italy . 518 parts In-Stock

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$13.222

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$13.222

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Parana Technologies

USA . 567 parts In-Stock

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$14.723

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$15.163

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567

$14.723

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DigiPath Technology Company

USA . 2,186 parts In-Stock

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$16.212

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$14.915

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$16.212

$14.915

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ChromeModa Solutions

Germany . 5,958 parts In-Stock

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$16.543

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$13.565

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$16.543

$13.565

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IDEA Electronic Components Group

UK . 1,656 parts In-Stock

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$16.543

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$15.716

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$14.889

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1,656

$16.543

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$14.889

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One Stop Electronics

USA . 766 parts In-Stock

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$691.000

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766

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Corphita

USA . 4,926 parts In-Stock

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Northwest PG Solutions

USA . 2,317 parts In-Stock

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Native Components

USA . 595 parts In-Stock

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Overview

Experience seamless digital transmission with the AFE1103EG4 by Texas Instruments. As a leader in cutting-edge technology, Texas Instruments ensures top-notch quality and reliability in all their products. This innovative device is perfect for a wide range of applications in the digital transmission interfaces category. From its compact design to its high-performance capabilities, the AFE1103EG4 offers unmatched value and benefits to customers. Upgrade your systems today and enjoy the advantages that this powerful product has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, reducing assembly time and improving reliability.

Power Supplies (V): 3.3,5

Support for both 3.3V and 5V power supplies provides flexibility and compatibility with a wide range of systems and devices.

No. of Terminals: 48

Having 48 terminals allows for a high level of connectivity and versatility in networking or communication applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand harsh environmental conditions and extended use.

Minimum Operating Temperature: -40 °C

The ability to operate at -40°C makes this product suitable for use in extremely cold environments or industrial settings.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures excellent conductivity, corrosion resistance, and long-term reliability.

Data Rate: 1.168 Mbps

The high data rate of 1.168 Mbps allows for fast and efficient data transmission, making it ideal for high-speed communication applications.

Technical Specifications

Digital Transmission Interfaces AFE1103EG4 attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

1.168 Mbps

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

15.875 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

AFE1103EG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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