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AFE1103E

Texas Instruments

AFE1103E by Texas Instruments

AFE1103E by Texas Instruments is a digital transmission interface IC with 48 terminals, operating at 1.168 Mbps data rate and 3.3V nominal voltage. It features CMOS technology, GULL WING terminal form, and is ideal for industrial telecom applications due to its -40 to 85°C temperature range.

Median Price

$23.600

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 886 parts In-Stock

1+ parts

-

100+ parts

$18.880

1k+ parts

$16.890

10k+ parts

$15.900

886

-

$18.880

$16.890

$15.900

DigiKey

USA . 886 parts In-Stock

1+ parts

-

100+ parts

$24.840

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$24.840

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Verical

USA . 866 parts In-Stock

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$23.600

1k+ parts

$21.113

10k+ parts

$19.875

866

-

$23.600

$21.113

$19.875

Distributors (In-Stock)

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Digiode

USA . 2,053 parts In-Stock

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$19.931

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$19.931

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Vyrian

USA . 4,123 parts In-Stock

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$20.980

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DigiKey Marketplace

USA . 1,816 parts In-Stock

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1,816

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Bristol Electronics

USA . 489 parts In-Stock

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ECAB

Sweden . 27 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,528 parts In-Stock

1+ parts

$12.869

100+ parts

-

1k+ parts

$13.349

10k+ parts

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1,528

$12.869

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$13.349

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DigiPath Technology Company

USA . 2,302 parts In-Stock

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$14.171

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$14.171

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ChromeModa Solutions

Germany . 6,967 parts In-Stock

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$14.460

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$11.857

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$14.460

$11.857

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IDEA Electronic Components Group

UK . 1,839 parts In-Stock

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$14.460

100+ parts

$13.737

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$13.014

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1,839

$14.460

$13.737

$13.014

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One Stop Electronics

USA . 1,351 parts In-Stock

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$17.830

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$17.830

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Corphita

USA . 5,649 parts In-Stock

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$18.882

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5,649

$18.882

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Alle Elektronik GmbH

Germany . 4,930 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Northwest PG Solutions

USA . 763 parts In-Stock

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Native Components

USA . 450 parts In-Stock

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450

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Microchip USA

USA . 151 parts In-Stock

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151

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Overview

Unlock the power of seamless digital transmission with the AFE1103E by Texas Instruments. Crafted with precision and expertise, this innovative device offers unparalleled performance and reliability in a variety of applications. From telecommunications to industrial automation, this compact yet powerful solution delivers value and benefits that exceed expectations. Experience the advantages of cutting-edge technology and elevate your projects with the AFE1103E today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Power Supplies (V): 3.3,5

Support for multiple power supply options (3.3V and 5V) gives flexibility in design and compatibility with various systems.

No. of Terminals: 48

Having 48 terminals allows for complex connectivity and efficient signal transmission in the system.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in demanding industrial environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Data Rate: 1.168 Mbps

With a high data rate of 1.168 Mbps, this product is capable of fast and efficient digital signal transmission.

Technical Specifications

Digital Transmission Interfaces AFE1103E attributes and parameters. Explore more Digital Transmission Interfaces devices from Texas Instruments

Specs

Data Rate:

1.168 Mbps

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

15.875 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP48,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

AFE1103E Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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