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74SSTV16859RGQ8G3

Texas Instruments

74SSTV16859RGQ8G3 by Texas Instruments

74SSTV16859RGQ8G3 by Texas Instruments is a 13-bit latch with a propagation delay of 2.8 ns, suitable for applications requiring fast data transfer. Operating at a supply voltage of 2.5V, it features positive edge triggering and can handle up to 20 Amps of current, making it ideal for high-speed digital systems. With a max frequency of 200 MHz, this CMOS technology chip carrier is designed for commercial-grade use in various electronic devices.

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,829 parts In-Stock

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Digiode

USA . 4,901 parts In-Stock

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4,901

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Distributors (Availability)

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Native Components

USA . 615 parts In-Stock

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$13.530

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615

$13.530

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Northwest PG Solutions

USA . 1,436 parts In-Stock

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$14.883

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$13.395

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Parana Technologies

USA . 1,923 parts In-Stock

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$19.612

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$1,821.275

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$17.651

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1,923

$19.612

$1,821.275

$17.651

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AZTECH Wire

Italy . 672 parts In-Stock

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$19.632

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672

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DigiPath Technology Company

USA . 1,918 parts In-Stock

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$21.595

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$21.595

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ChromeModa Solutions

Germany . 6,550 parts In-Stock

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$22.036

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$18.070

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$22.036

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IDEA Electronic Components Group

UK . 1,348 parts In-Stock

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$22.036

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$20.934

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$19.832

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One Stop Electronics

USA . 1,236 parts In-Stock

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$59.000

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Corphita

USA . 1,291 parts In-Stock

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Overview

Enhance your electronic projects with the 74SSTV16859RGQ8G3 by Texas Instruments! Known for their superior quality and reliability, Texas Instruments delivers top-notch latches & flip-flops that cater to a wide range of applications. This versatile chip carrier features a fast propagation delay of 2.8ns, ensuring efficient performance. With a nominal supply voltage of 2.5V and true output polarity, this component guarantees seamless integration in your designs. Trust in Texas Instruments to provide cutting-edge technology that maximizes functionality and value for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the latch & flip-flop lightweight and durable.

Propagation Delay At Nominal Supply: 2.8 ns

The low propagation delay ensures fast switching, making this latch & flip-flop suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes installation easier and saves space on the PCB.

No. of Bits: 13

With 13 bits, this latch & flip-flop can handle a larger amount of data, making it versatile for various applications.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal supply voltage of 2.5V makes it compatible with standard power supplies, ensuring ease of integration into existing systems.

Maximum Operating Temperature: 70 °C

The latch & flip-flop can operate in a wide temperature range, providing reliability in different environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this latch & flip-flop energy efficient and reliable.

Maximum Frequency At Nominal Supply: 200000000 Hz

With a high maximum frequency, this latch & flip-flop is ideal for high-speed digital circuits and data processing.

Technical Specifications

Latches & Flip-Flops 74SSTV16859RGQ8G3 attributes and parameters. Explore more Latches & Flip-Flops devices from Texas Instruments

Specs

Family:

SSTV

JESD-30 Code:

S-PQCC-N56

JESD-609 Code:

e3

Length:

8 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

200000000 Hz

Maximum I (ol):

20 Amp

Moisture Sensitivity Level (MSL):

3

No. of Bits:

13

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC56,.31SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Propagation Delay At Nominal Supply:

2.8 ns

Propagation Delay (tpd):

2.8 ns

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Type:

POSITIVE EDGE

Width:

8 mm

Minimum fmax:

200 MHz

Trade Compliance

74SSTV16859RGQ8G3 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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