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74AHCT1G14DBVTE4

Texas Instruments

74AHCT1G14DBVTE4 by Texas Instruments

74AHCT1G14DBVTE4 by Texas Instruments is a CMOS logic gate with Schmitt Trigger feature. It operates at a supply voltage range of 4.5V to 5.5V and has a propagation delay of 9ns, making it suitable for automotive applications requiring fast response times. With a compact package style and low power consumption, this device is ideal for space-constrained designs in the automotive industry.

Median Price

$1.990

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 672 parts In-Stock

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$1.990

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$0.940

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672

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$0.940

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Distributors (In-Stock)

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Digiode

USA . 3,902 parts In-Stock

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$1.416

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Vyrian

USA . 8,223 parts In-Stock

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Corphita

USA . 4,658 parts In-Stock

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$1.341

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4,658

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Native Components

USA . 977 parts In-Stock

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$6.385

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977

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Parana Technologies

USA . 628 parts In-Stock

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$26.894

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$29.794

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628

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$29.794

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ChromeModa Solutions

Germany . 4,233 parts In-Stock

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$30.218

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$24.779

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4,233

$30.218

$24.779

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IDEA Electronic Components Group

UK . 1,168 parts In-Stock

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$30.218

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$28.707

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$27.196

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1,168

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QUARKTWIN TECHNOLOGY LTD

USA . 25,424 parts In-Stock

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Microchip USA

USA . 7,234 parts In-Stock

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Northwest PG Solutions

USA . 1,849 parts In-Stock

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Perfect Parts

USA . 1,680 parts In-Stock

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1,680

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DigiPath Technology Company

USA . 639 parts In-Stock

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$27.245

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Overview

Discover the innovative 74AHCT1G14DBVTE4 by Texas Instruments, a top-quality logic gate that offers impeccable performance and reliability. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This small outline, low profile package boasts a 9ns propagation delay, making it ideal for automotive-grade projects. Experience the benefits of this advanced technology, from its Schmitt trigger feature to its 3-state output characteristics. Elevate your designs with the exceptional value and advantages that the 74AHCT1G14DBVTE4 brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 9 ns

Low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and making installation simpler.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage of 5V makes this logic gate compatible with a wide range of circuit designs.

Load Capacitance (CL): 50 pF

The low load capacitance allows for efficient energy consumption and stable performance in different circuit configurations.

Power Supplies (V): 5

Consistent power supply ensures reliable operation of the logic gate under various operating conditions.

No. of Terminals: 5

Having a limited number of terminals simplifies the connection process, reducing the chances of errors during installation.

Maximum I (ol): 8 Amp

High output current capability allows this logic gate to drive heavy loads without external amplification.

Output Characteristics: 3-STATE

The 3-state output feature provides flexibility in controlling signal output, enabling efficient utilization of the logic gate in different applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliable performance even in extreme environmental conditions.

Technical Specifications

Logic Gates 74AHCT1G14DBVTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

74AHCT1G14DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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