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74AHCT1G04DBVTG4

Texas Instruments

74AHCT1G04DBVTG4 by Texas Instruments

74AHCT1G04DBVTG4 by Texas Instruments is a CMOS logic gate with 8.5 ns propagation delay at 5V, suitable for automotive applications. It features a small outline package with low profile and shrink pitch, surface mountable, and operates b/w -40 to 125 °C.

Median Price

$0.730

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 515 parts In-Stock

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$1.150

100+ parts

$0.694

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$0.540

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$1.150

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Avnet

USA . 1,000 parts In-Stock

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$0.309

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$0.309

Distributors (In-Stock)

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Vyrian

USA . 8,602 parts In-Stock

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Digiode

USA . 2,241 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 468 parts In-Stock

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$6.110

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468

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AZTECH Wire

Italy . 854 parts In-Stock

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$7.580

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854

$7.580

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Parana Technologies

USA . 1,502 parts In-Stock

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$18.595

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$18.696

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$18.595

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$18.696

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One Stop Electronics

USA . 199 parts In-Stock

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$19.000

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$19.000

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DigiPath Technology Company

USA . 1,916 parts In-Stock

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$20.475

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$18.837

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1,916

$20.475

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ChromeModa Solutions

Germany . 4,992 parts In-Stock

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$20.893

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$17.132

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IDEA Electronic Components Group

UK . 2,115 parts In-Stock

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$19.848

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$18.804

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Microchip USA

USA . 2,364 parts In-Stock

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Corphita

USA . 735 parts In-Stock

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Northwest PG Solutions

USA . 677 parts In-Stock

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Overview

With the 74AHCT1G04DBVTG4 by Texas Instruments, you can expect top-notch quality and reliability from a leading manufacturer in the industry. This logic gate provides fast propagation delay at nominal supply, making it ideal for a wide range of applications. From automotive to industrial, this versatile component offers exceptional performance with a low profile design and small outline package. Trust Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Choose the 74AHCT1G04DBVTG4 for superior results in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable.

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures fast processing and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures compatibility with standard electronic systems.

Load Capacitance (CL): 50 pF

Suitable load capacitance for efficient signal transmission.

Power Supplies (V): 5

Stable power supply at 5V for consistent performance.

No. of Terminals: 5

Optimal number of terminals for connection to external components.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Compact and space-saving package style for integration into tight spaces.

Maximum I (ol): 8 Amp

High maximum output current capability for driving external loads.

Output Characteristics: 3-STATE

3-state output allows for flexibility in signal routing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates 74AHCT1G04DBVTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

8.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

74AHCT1G04DBVTG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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