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5962-9065001PA

Texas Instruments

5962-9065001PA by Texas Instruments

5962-9065001PA by Texas Instruments is a MILITARY-grade ANALOG CIRCUIT with BIPOLAR technology. It operates at temperatures from -55 to 125 °C and has a Nominal Voltage of 6 V. This RECTANGULAR IN-LINE package with 8 terminals is ideal for applications requiring a max output current of 0.25 A.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,818 parts In-Stock

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Digiode

USA . 2,271 parts In-Stock

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Resion

USA . 11 parts In-Stock

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One Stop Electronics

USA . 1,065 parts In-Stock

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$1.500

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Native Components

USA . 707 parts In-Stock

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$12.620

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Northwest PG Solutions

USA . 665 parts In-Stock

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$13.882

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$12.494

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AZTECH Wire

Italy . 523 parts In-Stock

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Parana Technologies

USA . 1,588 parts In-Stock

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$18.436

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$18.555

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DigiPath Technology Company

USA . 1,765 parts In-Stock

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$20.301

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$18.677

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ChromeModa Solutions

Germany . 2,047 parts In-Stock

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$20.715

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$16.986

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IDEA Electronic Components Group

UK . 524 parts In-Stock

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$19.679

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Corphita

USA . 1,577 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Texas Instruments 5962-9065001PA. Manufactured to the highest standards, this analog circuit semiconductor offers unparalleled quality and reliability. Ideal for military-grade applications, this versatile component boasts a wide operating temperature range and superior performance. Experience the value and benefits of Texas Instruments' expertise with the 5962-9065001PA - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed material ensures durability and protection for the semiconductor, making it suitable for harsh environments.

Screening Level: MIL-STD-883

Compliance with MIL-STD-883 screening level indicates high reliability and quality standards, making the product ideal for critical applications where reliability is crucial.

Nominal Supply Voltage (Vsup): 6 V

With a higher nominal supply voltage of 6V, this semiconductor can handle higher power requirements, making it suitable for applications that demand more power.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows this semiconductor to operate reliably in extreme heat conditions, expanding its range of applications.

Technology: BIPOLAR

The bipolar technology used in this semiconductor offers high-speed performance and accuracy, making it a good choice for applications that require precise analog circuit functionality.

Technical Specifications

Other Function Semiconductors 5962-9065001PA attributes and parameters. Explore more Other Function Semiconductors devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-GDIP-T8

Length:

9.58 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.25 A

Nominal Output Voltage:

5 V

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

5.08 mm

Sub-Category:

Other Analog ICs

Nominal Supply Voltage (Vsup):

6 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

7.62 mm

Trade Compliance

5962-9065001PA Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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