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5962-89441012X

Texas Instruments

5962-89441012X by Texas Instruments

5962-89441012X by Texas Instruments is a MIL-STD-883 compliant analog circuit IC in a ceramic, metal-sealed co-fired chip carrier package. It operates b/w -55 to 125 °C with supply voltage range of 4.5V to 35V, making it ideal for military-grade applications requiring high reliability and performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,678 parts In-Stock

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Digiode

USA . 1,619 parts In-Stock

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QIE Inc.

USA . 6 parts In-Stock

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One Stop Electronics

USA . 1,522 parts In-Stock

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$1.500

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$1.500

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Parana Technologies

USA . 2,138 parts In-Stock

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$5.630

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$6.426

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DigiPath Technology Company

USA . 18 parts In-Stock

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$6.199

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$5.704

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18

$6.199

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ChromeModa Solutions

Germany . 2,228 parts In-Stock

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$6.326

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$5.187

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$6.326

$5.187

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IDEA Electronic Components Group

UK . 1,231 parts In-Stock

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$6.326

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$5.693

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AZTECH Wire

Italy . 652 parts In-Stock

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$10.306

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Corphita

USA . 2,250 parts In-Stock

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2,250

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Native Components

USA . 591 parts In-Stock

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Northwest PG Solutions

USA . 79 parts In-Stock

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Overview

Experience unmatched quality and reliability with the 5962-89441012X by Texas Instruments, a leading manufacturer in the semiconductor industry. This versatile chip carrier offers a wide range of applications in analog circuits, providing exceptional performance even in extreme temperatures. With military-grade screening and a durable ceramic, metal-sealed co-fired package body material, this innovative product ensures long-lasting functionality. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and brings value to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material ensures durability and reliability for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying assembly processes.

Screening Level: MIL-STD-883

The MIL-STD-883 screening level ensures that the product meets stringent military standards for quality and performance.

Nominal Supply Voltage (Vsup): 10 V

The 10V nominal supply voltage provides a stable power source for the functioning of the semiconductor.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers a compact and efficient design, suitable for applications where space is limited.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this semiconductor can withstand high heat environments without compromising performance.

Technology: BIPOLAR

Utilizing bipolar technology ensures high-speed performance and accurate signal processing capabilities.

Technical Specifications

Other Function Semiconductors 5962-89441012X attributes and parameters. Explore more Other Function Semiconductors devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage (Vsup):

35 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

10 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width (mm):

8.89 mm

Trade Compliance

5962-89441012X Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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