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5962-01-238-4513

Texas Instruments

5962-01-238-4513 by Texas Instruments

Texas Instruments' 5962-01-238-4513 is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 70ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,358 parts In-Stock

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Vyrian

USA . 3,691 parts In-Stock

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3,691

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Beltway Electronics Company

USA . 32 parts In-Stock

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32

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Northwest PG Solutions

USA . 1,361 parts In-Stock

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$2.706

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$2.706

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Parana Technologies

USA . 1,071 parts In-Stock

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$3.468

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$3.994

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$3.468

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IDEA Electronic Components Group

UK . 153 parts In-Stock

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$3.897

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$3.507

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153

$3.897

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ChromeModa Solutions

Germany . 127 parts In-Stock

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$3.897

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$3.196

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127

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One Stop Electronics

USA . 809 parts In-Stock

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$7.000

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809

$7.000

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AZTECH Wire

Italy . 636 parts In-Stock

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$11.690

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$11.690

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Corphita

USA . 3,803 parts In-Stock

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DigiPath Technology Company

USA . 831 parts In-Stock

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$3.514

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Native Components

USA . 822 parts In-Stock

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$2.386

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Overview

Unlock the power of innovation with the 5962-01-238-4513 by Texas Instruments. This OTP ROM offers unparalleled quality and reliability, thanks to its ceramic package body material and advanced technology. Ideal for a wide range of applications, this versatile product boasts a 256X8 organization and 2048-bit memory density. With a nominal supply voltage of 5V and maximum access time of 70ns, it delivers fast and efficient performance. Trust Texas Instruments for cutting-edge solutions that drive success in your projects. Elevate your designs with the unmatched value and benefits of the 5962-01-238-4513.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging offers excellent durability and heat resistance, making it a reliable choice for long-term use in various environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at 5V makes this OTP ROM compatible with a wide range of standard power supplies, making it easy to integrate into existing systems.

No. of Terminals: 20

Having 20 terminals allows for efficient connectivity and communication with other components in a circuit, enhancing the overall performance of the product.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function reliably even in high-temperature environments, ensuring consistent performance.

Organization: 256X8

The 256X8 organization means that this OTP ROM can store 256 words of data, each with a width of 8 bits, providing ample memory capacity for storing information.

Technology: TTL

Utilizing TTL technology ensures compatibility with a wide range of digital systems, making this OTP ROM versatile and easy to integrate into various applications.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM offers sufficient storage capacity for storing critical data or program instructions in a compact and efficient manner.

Maximum Access Time: 70 ns

The maximum access time of 70 nanoseconds ensures quick retrieval of data from the OTP ROM, resulting in smooth operation and responsive performance.

Technical Specifications

OTP ROM 5962-01-238-4513 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-238-4513 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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