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FLL1200IU-2

Sumitomo Electric Industries

FLL1200IU-2 by Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SPM Sales

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5

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-

-

-

Technical Specifications

RF Power Field Effect Transistors (FET) FLL1200IU-2 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Sumitomo Electric Industries

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (ID):

30 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

FLL1200IU-2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sumitomo Electric Industries

Founded 1897 in Osaka, Japan, Sumitomo Electric has extensive business operations in five industries: Automotive, Infocommunications, Electronics, Energy and Environment, Industrial Materials.

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