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TSH321IDT

STMicroelectronics

TSH321IDT by STMicroelectronics

TSH321IDT by STMicroelectronics is an Operational Amplifier with a max input offset voltage of 12000 uV, min slew rate of 200 V/us, and nominal unity gain bandwidth of 300000 kHz. It is ideal for automotive applications due to its low-bias operation, wideband capability, and compact small outline package design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,719 parts In-Stock

1+ parts

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2,719

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Vyrian

USA . 2,587 parts In-Stock

1+ parts

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2,587

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Digiode

USA . 636 parts In-Stock

1+ parts

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636

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,191 parts In-Stock

1+ parts

$4.068

100+ parts

-

1k+ parts

$3.661

10k+ parts

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1,191

$4.068

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$3.661

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MKK Technologies

India . 2,169 parts In-Stock

1+ parts

$7.650

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2,169

$7.650

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DigiPath Technology Company

USA . 2,169 parts In-Stock

1+ parts

$7.650

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2,169

$7.650

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Corphita

USA . 771 parts In-Stock

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771

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Parana Technologies

USA . 623 parts In-Stock

1+ parts

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$4.864

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623

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$4.864

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Overview

Elevate your projects with the TSH321IDT operational amplifier by STMicroelectronics. Crafted with precision and quality, this amplifier offers unparalleled performance in a compact package. Ideal for automotive applications, its wideband technology ensures optimal functionality while the low-bias design guarantees efficiency. With a nominal unity gain bandwidth of 300000 kHz, this amplifier delivers exceptional results. Trust STMicroelectronics to provide you with the tools you need to take your projects to the next level. Elevate your performance with the TSH321IDT today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 12000 uV

Low input offset voltage ensures accurate and stable signal processing in various applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the input signal.

Minimum Slew Rate: 200 V/us

Fast slew rate allows for rapid signal response and high-frequency performance.

Maximum Operating Temperature: 125 °C

Wide temperature range ensures reliability and functionality in various operating conditions.

Nominal Unity Gain Bandwidth: 300000 kHz

High unity gain bandwidth provides ample bandwidth for signal processing and amplification.

Technology: BIPOLAR

Bipolar technology offers high precision and low noise performance, suitable for demanding applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Designed specifically for amplifying and processing signals accurately, making it ideal for audio and instrumentation applications.

Technical Specifications

Operational Amplifiers (Op Amps) TSH321IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±3/±6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

YES (AVCL>=2)

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

300 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

200

Minimum Slew Rate:

200 V/us

Nominal Slew Rate:

400 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

300 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

40 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSH321IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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