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TSH321ID

STMicroelectronics

TSH321ID by STMicroelectronics

TSH321ID by STMicroelectronics is an Operational Amplifier with a max input offset voltage of 12000 uV, min slew rate of 200 V/us, and nominal unity gain bandwidth of 300000 kHz. This Op Amp is suitable for automotive applications due to its low-bias feature, wideband capability, and temperature grade up to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ECAB

Sweden . 13,288 parts In-Stock

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13,288

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Vyrian

USA . 6,729 parts In-Stock

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6,729

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Digiode

USA . 4,060 parts In-Stock

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4,060

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Anansix

USA . 293 parts In-Stock

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293

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 459 parts In-Stock

1+ parts

$6.720

100+ parts

-

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$6.048

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459

$6.720

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$6.048

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Microchip USA

USA . 284 parts In-Stock

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$11.204

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284

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MKK Technologies

India . 1,773 parts In-Stock

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$12.636

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$12.636

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DigiPath Technology Company

USA . 1,773 parts In-Stock

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$12.636

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1,773

$12.636

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AZTECH Wire

Italy . 777 parts In-Stock

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$14.700

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777

$14.700

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A-Z Elektronik GmbH

Germany . 5,570 parts In-Stock

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5,570

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Corphita

USA . 2,234 parts In-Stock

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Vigor

Singapore . 2,014 parts In-Stock

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Parana Technologies

USA . 1,470 parts In-Stock

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$8.034

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$8.034

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Kepictronics

USA . 1,350 parts In-Stock

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Perfect Parts

USA . 700 parts In-Stock

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700

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Assy Fe

Spain . 25 parts In-Stock

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25

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Overview

Experience the unmatched quality and reliability of STMicroelectronics with the TSH321ID operational amplifier. This versatile component is perfect for a wide range of applications, from automotive to industrial. With a minimum voltage gain of 200 and a nominal unity gain bandwidth of 300000 kHz, this op amp offers exceptional performance. Whether you need precise signal amplification or accurate sensor readings, the TSH321ID delivers superior results every time. Trust STMicroelectronics for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 12000 uV

Low input offset voltage ensures high precision in signal amplification, making this operational amplifier suitable for applications requiring accurate measurements.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio ensures that common-mode signals are effectively rejected, leading to cleaner and more accurate output signals.

Minimum Slew Rate: 200 V/us

Fast slew rate allows the operational amplifier to rapidly respond to input signal changes, making it ideal for applications requiring quick and precise signal processing.

Frequency Compensation: YES (AVCL>=2)

Frequency compensation helps stabilize the operational amplifier's gain at high frequencies, ensuring consistent performance across a wide range of frequencies.

Nominal Unity Gain Bandwidth: 300000 kHz

High unity gain bandwidth indicates the operational amplifier's capability to amplify signals with minimal distortion at high frequencies, making it suitable for high-speed applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides high precision and stability in signal amplification, making this operational amplifier a reliable choice for demanding applications.

Technical Specifications

Operational Amplifiers (Op Amps) TSH321ID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±3/±6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

YES (AVCL>=2)

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

300 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

200

Minimum Slew Rate:

200 V/us

Nominal Slew Rate:

400 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

300 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

40 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSH321ID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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