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TS831-3IZ

STMicroelectronics

TS831-3IZ by STMicroelectronics

TS831-3IZ by STMicroelectronics is a CMOS power management IC designed for automotive applications, operating b/w -40 °C and 125°C. It features a nominal voltage of 5V, with a threshold voltage of +2.71V and a max supply current of 12µA. Its cylindrical package ensures efficient integration in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 2,287 parts In-Stock

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LWI Electronics Inc

India . 1,933 parts In-Stock

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Anansix

USA . 754 parts In-Stock

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Digiode

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Chip Stock

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Microchip USA

USA . 494 parts In-Stock

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$3.096

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$3.096

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AZTECH Wire

Italy . 200 parts In-Stock

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$16.830

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$16.830

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IDEA Electronic Components Group

UK . 946 parts In-Stock

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$16.946

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$15.252

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946

$16.946

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MKK Technologies

India . 2,330 parts In-Stock

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$31.867

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DigiPath Technology Company

USA . 2,330 parts In-Stock

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$31.867

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Component Stockers USA

USA . 236 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 8,351 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,355 parts In-Stock

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Corphita

USA . 3,272 parts In-Stock

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Vigor

Singapore . 2,000 parts In-Stock

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Parana Technologies

USA . 1,098 parts In-Stock

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Kepictronics

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Overview

Elevate your power management solutions with the TS831-3IZ from STMicroelectronics, a leader in cutting-edge technology. This robust IC delivers reliability and versatility for automotive applications, ensuring optimal performance in extreme conditions. With its compact design and exceptional efficiency, it enhances system stability while reducing energy consumption. Trust STMicroelectronics to power your innovations with quality and precision, unlocking new possibilities for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for various applications.

Package Shape: ROUND

The round package shape provides an efficient layout in circuit board designs, allowing for better space utilization.

Nominal Supply Voltage (Vsup): 5 V

A nominal supply voltage of 5 V is standard for many electronic devices, ensuring compatibility and ease of integration.

Power Supplies (V): 1/5.5

The operational range of 1 V to 5.5 V offers versatility for different applications, accommodating a wide range of power supply options.

No. of Terminals: 3

Having three terminals simplifies the design and reduces the complexity of circuit connections.

Package Style (Meter): CYLINDRICAL

A cylindrical package style can provide unique mounting options and enhance thermal performance compared to conventional shapes.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this IC is suitable for high-temperature environments, especially in automotive applications.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C makes this product ideal for extreme conditions, enhancing reliability in rugged applications.

Terminal Finish: TIN

A tin terminal finish provides good solderability and corrosion resistance, ensuring long-term durability and reliable connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient PCB layout and space-saving designs, crucial for compact applications.

Other IC Type: POWER SUPPLY SUPPORT CIRCUIT

Designed specifically as a power supply support circuit, this IC efficiently regulates voltage, ensuring stable operation for connected devices.

Minimum Supply Voltage (Vsup): 1 V

The capability to operate at a minimum supply voltage of 1 V enables the use in battery-powered devices, maximizing energy efficiency.

Nominal Threshold Voltage (V): +2.71V

A nominal threshold voltage of +2.71V allows for precise voltage regulation, which is critical for sensitive electronic components.

Temperature Grade: AUTOMOTIVE

Rated for automotive applications, this component is designed to withstand harsh environments and provide reliable performance in vehicles.

Maximum Supply Current (Isup): 0.012 mA

With a maximum supply current of only 0.012 mA, this IC is energy-efficient, ensuring minimal power drain in battery-operated devices.

Technology: CMOS

Using CMOS technology ensures low power consumption and high noise immunity, making this IC ideal for modern electronic applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form reduces the likelihood of circuit board breakage and improves mechanical stability, especially in automated assembly processes.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm is a common standard that facilitates compatibility with various PCB layouts and designs.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to handle a maximum supply voltage of 5.5 V provides flexibility, allowing it to operate efficiently across a variety of applications.

Technical Specifications

Power Management ICs TS831-3IZ attributes and parameters. Explore more Power Management ICs devices from STMicroelectronics

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.71V

Adjustable Threshold:

NO

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SIP3,.1,50

Package Shape:

Package Style (Meter):

CYLINDRICAL

Power Supplies (V):

1/5.5

Qualification:

Not Qualified

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.012 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Nominal Threshold Voltage (V):

+2.71V

Trade Compliance

TS831-3IZ Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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