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TL106-2

STMicroelectronics

TL106-2 by STMicroelectronics

STMicroelectronics TL106-2 SCR has 35A peak on-state current, 1.6A max on-state current, and 0.2mA gate trigger current. Ideal for applications requiring high power switching like motor control systems or industrial automation due to its robust performance and wide operating temperature range from -40 °C to 110°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,812 parts In-Stock

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Anansix

USA . 2,418 parts In-Stock

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Digiode

USA . 2,330 parts In-Stock

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ECAB

Sweden . 26 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 888 parts In-Stock

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$2.762

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$2.486

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888

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$2.486

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MKK Technologies

India . 955 parts In-Stock

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$5.193

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$5.193

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DigiPath Technology Company

USA . 955 parts In-Stock

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$5.193

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Corphita

USA . 4,329 parts In-Stock

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Parana Technologies

USA . 141 parts In-Stock

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$3.302

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) for your project? Look no further than the TL106-2 by STMicroelectronics. With a maximum DC Gate Trigger Current of 0.2 mA and a Non Repetitive Peak On-state Current of 35 A, this SCR offers superior quality and performance. Whether you're working on power supplies, motor control, or lighting applications, the TL106-2 provides exceptional value, reliability, and precision. Trust STMicroelectronics, a leading manufacturer in the industry, to deliver innovative solutions that meet your needs. Elevate your designs with the TL106-2 today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient operation and control of the SCR.

Non Repetitive Peak On-state Current: 35 A

High peak on-state current capacity enables the device to handle high current requirements effectively.

Maximum On-state Current: 1.6 A

Allows for reliable and stable on-state current flow within acceptable limits.

Maximum Leakage Current: 0.0002 mA

Low leakage current ensures minimal power loss and efficient performance of the SCR.

Maximum Operating Temperature: 110 °C

Wide operating temperature range makes the SCR suitable for a variety of environments and applications.

Trigger Device Type: SCR

Being an SCR, the device offers precise control over current flow and switching capability.

Minimum Operating Temperature: -40 °C

The SCR can operate in low temperature conditions without any performance issues.

Terminal Finish: TIN LEAD

TIN LEAD finish ensures good conductivity and durability of the terminals.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage requirement makes the SCR easy to control and operate.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage capability allows the SCR to handle high voltage applications efficiently.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Ability to handle rapid changes in off-state voltage ensures stable and reliable performance of the SCR.

Nominal Circuit Commutated Turn-off Time: 40 us

Low turn-off time ensures fast and efficient switching of the SCR, reducing power loss and improving overall performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TL106-2 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

40 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

JESD-609 Code:

e0

Maximum Leakage Current:

.0002 mA

Non Repetitive Peak On-state Current:

35 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TL106-2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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