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TL1003

STMicroelectronics

TL1003 by STMicroelectronics

The STMicroelectronics TL1003 is a Silicon Controlled Rectifier with 15mA DC Gate Trigger Current, 70A Non Repetitive Peak On-state Current, and 1.6A Max On-state Current. It operates b/w -40 to 110 °C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring precise current control in various temperature conditions.

Median Price

$32.010

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 17 parts In-Stock

1+ parts

$32.010

100+ parts

$22.838

1k+ parts

$21.686

10k+ parts

-

17

$32.010

$22.838

$21.686

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,506 parts In-Stock

1+ parts

$30.438

100+ parts

-

1k+ parts

-

10k+ parts

-

3,506

$30.438

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-

-

Vyrian

USA . 4,481 parts In-Stock

1+ parts

-

100+ parts

-

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4,481

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-

-

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Anansix

USA . 757 parts In-Stock

1+ parts

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757

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ECAB

Sweden . 477 parts In-Stock

1+ parts

-

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477

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,724 parts In-Stock

1+ parts

$3.536

100+ parts

-

1k+ parts

$3.183

10k+ parts

-

1,724

$3.536

-

$3.183

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MKK Technologies

India . 985 parts In-Stock

1+ parts

$6.650

100+ parts

-

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985

$6.650

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-

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DigiPath Technology Company

USA . 985 parts In-Stock

1+ parts

$6.650

100+ parts

-

1k+ parts

-

10k+ parts

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985

$6.650

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-

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Corphita

USA . 606 parts In-Stock

1+ parts

$28.836

100+ parts

-

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-

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606

$28.836

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-

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Kepictronics

USA . 4,500 parts In-Stock

1+ parts

-

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4,500

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Parana Technologies

USA . 236 parts In-Stock

1+ parts

-

100+ parts

$4.228

1k+ parts

-

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236

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$4.228

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Overview

The STMicroelectronics TL1003 is a top-of-the-line Silicon Controlled Rectifier (SCR) designed to meet the highest quality standards. As a trusted manufacturer in the industry, STMicroelectronics ensures reliability and performance in every product. The TL1003 is perfect for a wide range of applications, from industrial machinery to consumer electronics. Customers can trust in the value and benefits this SCR offers, with features like a maximum DC Gate Trigger Current of 15 mA and a Non Repetitive Peak On-state Current of 70 A. Experience the advantages of the TL1003 and see the difference it can make in your projects.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 15 mA

Low gate trigger current allows for precise control over the switching of the SCR, ensuring reliable performance.

Non Repetitive Peak On-state Current: 70 A

High peak on-state current capability enables the SCR to handle high current loads without being damaged.

Maximum On-state Current: 1.6 A

With a high maximum on-state current, this SCR can handle moderate to high current applications effectively.

Maximum Leakage Current: 0.0002 mA

Low leakage current ensures minimal power loss during standby or off-state operation.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows this SCR to function reliably in various environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers robust and reliable switching performance.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish provides good solderability and electrical conductivity, enhancing the overall reliability of the device.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage requirement simplifies the drive circuit design and enhances the efficiency of the SCR.

Repetitive Peak Off-state Voltage: 100 V

High repetitive peak off-state voltage rating makes this SCR suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Fast rate of rise of off-state voltage allows the SCR to quickly turn off and protect the circuit from voltage spikes.

Nominal Circuit Commutated Turn-off Time: 80 us

Fast turn-off time ensures efficient operation and minimizes the heat dissipation in the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TL1003 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

80 us

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

3 V

JESD-609 Code:

e0

Maximum Leakage Current:

.0002 mA

Non Repetitive Peak On-state Current:

70 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TL1003 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

6230-15-124-2632, 6230151242632

NIIN

151242632

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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