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TL107-05

STMicroelectronics

TL107-05 by STMicroelectronics

The STMicroelectronics TL107-05 is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 35A, and max DC gate trigger current of 0.5mA. It operates b/w -40 to 110 °C and has a repetitive peak off-state voltage of 50V. Ideal for applications requiring precise gate triggering in power control circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,950 parts In-Stock

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1,950

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Digiode

USA . 1,159 parts In-Stock

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1,159

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Anansix

USA . 859 parts In-Stock

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859

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,292 parts In-Stock

1+ parts

$3.973

100+ parts

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1k+ parts

$3.575

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2,292

$3.973

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$3.575

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MKK Technologies

India . 831 parts In-Stock

1+ parts

$7.470

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831

$7.470

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DigiPath Technology Company

USA . 831 parts In-Stock

1+ parts

$7.470

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831

$7.470

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Corphita

USA . 3,909 parts In-Stock

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3,909

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Parana Technologies

USA . 1,992 parts In-Stock

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$4.750

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1,992

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$4.750

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Overview

Unleash the power of reliable performance with the TL107-05 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers (SCR) that are designed for efficiency and durability. From industrial applications to consumer electronics, this SCR offers unparalleled value and benefits to customers seeking dependable solutions. Trust STMicroelectronics to provide the quality you need for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.5 mA

Low trigger current allows for efficient and precise control of the silicon controlled rectifier, enhancing overall performance.

Non Repetitive Peak On-state Current: 35 A

High peak current capability ensures the silicon controlled rectifier can handle temporary surge loads without risk of damage.

Maximum On-state Current: 1.6 A

Sufficient on-state current rating for various applications, providing reliable conduction during operation.

Maximum Leakage Current: 0.0002 mA

Low leakage current ensures minimal power wastage and improved efficiency in standby mode.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for versatility in different environmental conditions and applications.

Trigger Device Type: SCR

Specifically designed as a Silicon Controlled Rectifier, ensuring compatibility and performance in relevant circuits.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures enables usage in diverse industrial and commercial settings.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish provides good conductivity and solderability, facilitating easy integration into electronic assemblies.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage requirement enables efficient control of the SCR, enhancing responsiveness and accuracy in switching operations.

Repetitive Peak Off-state Voltage: 50 V

Adequate off-state voltage handling capability for ensuring reliable insulation and protection against voltage spikes.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Fast rate of rise of off-state voltage allows for quick response and protection against potential overvoltage conditions.

Nominal Circuit Commutated Turn-off Time: 40 us

Fast turn-off time ensures efficient switching and minimizes power dissipation during load transitions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TL107-05 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

40 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.5 mA

Maximum DC Gate Trigger Voltage:

1 V

JESD-609 Code:

e0

Maximum Leakage Current:

.0002 mA

Non Repetitive Peak On-state Current:

35 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TL107-05 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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