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TL107-6

STMicroelectronics

TL107-6 by STMicroelectronics

The STMicroelectronics TL107-6 is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.5 mA, Non Repetitive Peak On-state Current of 35 A, and Max On-state Current of 1.6 A. It operates b/w -40 to 110 °C and has a Repetitive Peak Off-state Voltage of 600 V. Ideal for power control applications requiring precise current regulation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,010 parts In-Stock

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Digiode

USA . 1,792 parts In-Stock

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1,792

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Vyrian

USA . 1,014 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 633 parts In-Stock

1+ parts

$4.458

100+ parts

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$4.012

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633

$4.458

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$4.012

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MKK Technologies

India . 761 parts In-Stock

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$8.384

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761

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DigiPath Technology Company

USA . 761 parts In-Stock

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$8.384

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761

$8.384

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Corphita

USA . 1,583 parts In-Stock

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Parana Technologies

USA . 1,047 parts In-Stock

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$5.331

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$5.331

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Overview

Upgrade your power control solutions with the TL107-6 by STMicroelectronics. As a leading manufacturer of Silicon Controlled Rectifiers (SCR), STMicroelectronics guarantees top-notch quality and reliability. Ideal for various applications, this SCR offers a maximum DC Gate Trigger Current of 0.5 mA and a Non Repetitive Peak On-state Current of 35 A. With a low Maximum Leakage Current of 0.0002 mA and a wide operating temperature range from -40 to 110 °C, the TL107-6 provides efficient power management. Trust STMicroelectronics to deliver superior performance and value for all your power control needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.5 mA

The low gate trigger current requirement allows for efficient control of the SCR, leading to optimized performance.

Non Repetitive Peak On-state Current: 35 A

The high peak on-state current capability ensures the SCR can handle sudden high currents without issues, making it suitable for industrial applications.

Maximum On-state Current: 1.6 A

The maximum on-state current rating indicates the SCR's ability to carry continuous current without overheating, ensuring reliability in operation.

Maximum Leakage Current: 0.0002 mA

The low leakage current minimizes power loss when the SCR is in the off-state, which is essential for energy-efficient applications.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature allows the SCR to function in harsh environments without performance degradation, increasing its durability.

Trigger Device Type: SCR

Being an SCR, the product offers precise control over the triggering mechanism, making it reliable for various switching applications.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating enables the SCR to handle elevated voltages, making it suitable for high-power applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The minimum rate of rise of off-state voltage ensures rapid switching performance of the SCR, which is crucial for efficient operation.

Nominal Circuit Commutated Turn-off Time: 40 us

The fast turn-off time indicates the SCR's ability to switch off quickly, reducing power dissipation and enhancing overall system efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TL107-6 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

40 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.5 mA

Maximum DC Gate Trigger Voltage:

1 V

JESD-609 Code:

e0

Maximum Leakage Current:

.0002 mA

Non Repetitive Peak On-state Current:

35 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trigger Device Type:

SCR

Trade Compliance

TL107-6 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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