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T410-600-W

STMicroelectronics

T410-600-W by STMicroelectronics

T410-600-W by STMicroelectronics is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and 10mA max DC gate trigger current. It is a 3-terminal device in a rectangular package suitable for applications requiring isolated case connection and 4-quadrant logic level triggering.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,499 parts In-Stock

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Anansix

USA . 1,333 parts In-Stock

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1,333

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Digiode

USA . 1,125 parts In-Stock

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NAC Semi

USA . 75 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 49 parts In-Stock

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Halfin

Belgium . 30 parts In-Stock

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30

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Huijzer Components

Netherlands . 17 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,666 parts In-Stock

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$2.382

100+ parts

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$2.144

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1,666

$2.382

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$2.144

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MKK Technologies

India . 298 parts In-Stock

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$4.479

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DigiPath Technology Company

USA . 298 parts In-Stock

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$4.479

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298

$4.479

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AZTECH Wire

Italy . 412 parts In-Stock

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$21.870

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Component Stockers USA

USA . 751 parts In-Stock

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$99.990

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751

$99.990

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,408 parts In-Stock

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Corphita

USA . 3,918 parts In-Stock

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Perfect Parts

USA . 2,944 parts In-Stock

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Parana Technologies

USA . 2,048 parts In-Stock

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$2.848

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2,048

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$2.848

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Overview

Unleash the power of reliable and efficient switching with the T410-600-W by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers high-quality products like this TRIAC that are perfect for a wide range of applications. With a maximum RMS On-state Current of 4A and a Repetitive Peak Off-state Voltage of 600V, this product offers superior performance and durability. Say goodbye to unreliable switching and hello to seamless operation with the T410-600-W.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides excellent insulation and protection for the internal components, ensuring durability and safety.

Maximum DC Gate Trigger Current: 10 mA

Low gate trigger current allows for precise control, making it suitable for various applications where precise triggering is required.

Configuration: SINGLE

Single configuration simplifies the design and installation process, reducing complexity and enhancing reliability.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low off-state leakage current results in efficient operation and reduces power wastage during off-state condition.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in a wide range of environmental conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

4 quadrant logic level TRIAC provides versatile triggering options, enabling precise control and flexibility in various applications.

Repetitive Peak Off-state Voltage: 600 V

High off-state voltage rating ensures safe operation in high-voltage applications, providing reliable performance and protection.

Minimum Critical Rate of Rise of Off-state Voltage: 50 V/us

High critical rate of rise of off-state voltage ensures fast switching and reliable performance in high-frequency applications.

Technical Specifications

Triode For Alternating Current (TRIAC) T410-600-W attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

1.8 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

50 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

15 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T410-600-W Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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