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STW4510AE

STMicroelectronics

STW4510AE by STMicroelectronics

STW4510AE by STMicroelectronics is a versatile power management IC with a nominal voltage of 3.6V and supports up to 7 channels. It operates b/w -30 °C and 85 °C, making it ideal for various applications. Its compact design features a thin profile grid array with 84 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,473 parts In-Stock

1+ parts

-

100+ parts

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1,473

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Digiode

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Anansix

USA . 879 parts In-Stock

1+ parts

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879

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 680 parts In-Stock

1+ parts

$18.472

100+ parts

-

1k+ parts

$16.625

10k+ parts

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680

$18.472

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$16.625

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MKK Technologies

India . 2,064 parts In-Stock

1+ parts

$34.735

100+ parts

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2,064

$34.735

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DigiPath Technology Company

USA . 2,064 parts In-Stock

1+ parts

$34.735

100+ parts

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2,064

$34.735

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Parana Technologies

USA . 2,004 parts In-Stock

1+ parts

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$22.086

1k+ parts

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2,004

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$22.086

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Corphita

USA . 1,999 parts In-Stock

1+ parts

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1,999

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Overview

Elevate your designs with the STW4510AE from STMicroelectronics, a leading name in power management solutions. This compact and efficient IC ensures reliable performance across various applications, from consumer electronics to industrial systems. With its robust temperature range and customizable features, it offers unparalleled versatility and energy savings. Trust in STMicroelectronics’ commitment to quality and innovation to power your next project with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction ensures reliability and resistance to environmental stress, making it suitable for long-term applications.

Surface Mount: YES

Surface mount technology allows for efficient integration into modern electronic devices, saving space and enhancing circuit density.

Package Shape: SQUARE

The square shape provides uniform distribution of thermal and electrical properties, optimizing performance in compact layouts.

Nominal Supply Voltage (Vsup): 3.6 V

A nominal supply voltage of 3.6 V provides compatibility with a wide range of power sources while ensuring reliable operation.

Power Supplies (V): 3/5

Supports both 3V and 5V power supplies, offering versatility for various applications and enabling seamless integration into existing systems.

No. of Terminals: 84

With 84 terminals, this IC allows for a rich set of features and connections, making it suitable for complex power management tasks.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch design of the grid array allow for high-density layouts while minimizing footprint, ideal for compact devices.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature of 85 °C ensures reliable performance in demanding environments, suitable for automotive and industrial applications.

Minimum Operating Temperature: -30 °C

The ability to operate at -30 °C enables use in low-temperature environments, making it versatile for diverse applications.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates effective heat dissipation and enhances overall performance in surface mount applications.

Maximum Seated Height: 1.16 mm

A maximum seated height of 1.16 mm enables low-profile designs, making it an excellent choice for space-constrained devices.

Width (mm): 6 mm

The compact 6 mm width supports integration into small PCBs, providing flexibility in design without sacrificing performance.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

As a power supply support circuit, this IC effectively manages voltage regulation and power distribution, essential for reliable system operation.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7 V allows operation in lower voltage scenarios, enhancing energy efficiency across a variety of applications.

Length: 6 mm

The 6 mm length complements the width to form a compact square package, promoting efficient PCB layout and minimal area consumption.

Maximum Supply Current (Isup): 0.25 mA

A low maximum supply current of 0.25 mA makes this IC energy-efficient, contributing to reduced power consumption in battery-operated devices.

No. of Channels: 7

With 7 channels available, this IC can manage multiple power outputs effectively, making it suitable for complex systems requiring simultaneous power distribution.

Terminal Form: BALL

Ball terminal form enhances solder joint reliability and allows for better thermal conduction, improving overall durability of the product.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm supports fine-pitch designs, making it an ideal option for high-density circuit layouts.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5 V, this IC can accommodate higher voltage scenarios, providing additional flexibility for various applications.

Adjustable Threshold: YES

The adjustable threshold feature allows precise control over performance parameters, enabling customization for specific application requirements.

Technical Specifications

Power Management ICs STW4510AE attributes and parameters. Explore more Power Management ICs devices from STMicroelectronics

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PBGA-B84

Length:

6 mm

No. of Channels:

7

No. of Functions:

1

No. of Terminals:

84

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,10X10,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.16 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width (mm):

6 mm

Trade Compliance

STW4510AE Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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