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STW4811MBHD/LF

STMicroelectronics

STW4811MBHD/LF by STMicroelectronics

STW4811MBHD/LF from STMicroelectronics is a versatile power management IC with a nominal voltage of 3.6V, operating b/w -30 °C to 85 °C. It features an adjustable threshold and supports supply voltages from 2.7V to 5.5V. Ideal for compact applications, it comes in a thin profile grid array package with 84 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,931 parts In-Stock

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4,931

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Anansix

USA . 2,773 parts In-Stock

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2,773

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Digiode

USA . 395 parts In-Stock

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395

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 553 parts In-Stock

1+ parts

$10.302

100+ parts

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$9.272

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553

$10.302

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$9.272

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MKK Technologies

India . 799 parts In-Stock

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$19.373

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799

$19.373

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DigiPath Technology Company

USA . 799 parts In-Stock

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$19.373

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799

$19.373

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Parana Technologies

USA . 1,986 parts In-Stock

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$12.318

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1,986

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$12.318

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Corphita

USA . 319 parts In-Stock

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319

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Overview

Unlock unparalleled efficiency with the STW4811MBHD/LF from STMicroelectronics, a leader in innovative power management solutions. This compact, high-performance IC ensures reliable operation across diverse applications, from consumer electronics to industrial systems. With its superior thermal stability and smart design, it optimizes power usage while minimizing space. Elevate your projects with proven quality and performance that only STMicroelectronics can offer—reliable technology for tomorrow's innovations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection for the internal components, making it suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy integration into compact designs, saving space on printed circuit boards.

Package Shape: SQUARE

The square package shape facilitates uniform thermal dissipation and simplifies PCB design.

Nominal Supply Voltage (Vsup): 3.6 V

A nominal voltage of 3.6 V is optimal for a wide range of applications, providing a good balance between performance and efficiency.

Power Supplies (V): 3/4.5

Supports multiple power supply voltages, ensuring versatility in various applications and designs.

Number of Terminals: 84

With 84 terminals, this IC provides extensive connectivity options, ideal for complex circuit designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch allow for high-density mounting, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, this IC is suitable for use in demanding environments.

Minimum Operating Temperature: -30 °C

The wide temperature range ensures reliable performance in various climatic conditions.

Terminal Finish: TIN SILVER COPPER

The high-quality terminal finish improves solderability and helps ensure the longevity of connections.

Terminal Position: BOTTOM

Bottom terminals enhance the thermal performance and allow for efficient space usage on the PCB.

Maximum Seated Height: 1.16 mm

A low seated height contributes to a compact design, which is advantageous for modern electronic devices.

Width: 6 mm

A compact width makes it suitable for tight layouts while still providing sufficient performance.

Other IC Type: POWER SUPPLY MANAGEMENT CIRCUIT

This type provides features for managing power effectively, optimizing energy efficiency across the system.

Minimum Supply Voltage (Vsup): 2.7 V

The ability to operate at a lower supply voltage enhances compatibility with low-voltage applications.

Length: 6 mm

A standardized length supports easy integration into existing designs and keeps manufacturing processes streamlined.

Maximum Supply Current (Isup): 0.25 mA

A low supply current improves overall energy efficiency, which is critical for battery-powered devices.

Technology: CMOS

Using CMOS technology ensures low power consumption and high-speed performance, making it suitable for various modern applications.

Terminal Form: BALL

Ball terminals allow for reliable connections and soldering ease, ensuring robust performance in various applications.

Terminal Pitch: 0.5 mm

A fine terminal pitch provides compact connectivity options, vital for high-density applications.

Maximum Supply Voltage (Vsup): 5.5 V

The capability to handle a maximum supply voltage of 5.5 V allows for flexible design choices without compromising safety.

Adjustable Threshold: YES

Adjustable threshold features enable customization for specific applications, enhancing the versatility of the product.

Technical Specifications

Power Management ICs STW4811MBHD/LF attributes and parameters. Explore more Power Management ICs devices from STMicroelectronics

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PBGA-B84

JESD-609 Code:

e1

Length:

6 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

84

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,10X10,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3/4.5

Qualification:

Not Qualified

Maximum Seated Height:

1.16 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width (mm):

6 mm

Trade Compliance

STW4811MBHD/LF Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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