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M74HCT125TTR

STMicroelectronics

M74HCT125TTR by STMicroelectronics

M74HCT125TTR by STMicroelectronics is a 4-channel bus driver with a propagation delay of 32 ns and operates at a nominal voltage of 5V. It features a compact 14-terminal package and supports true output polarity. Ideal for military applications, it ensures reliable performance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,249 parts In-Stock

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5,249

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Anansix

USA . 2,082 parts In-Stock

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2,082

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Digiode

USA . 1,426 parts In-Stock

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1,426

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 257 parts In-Stock

1+ parts

$0.368

100+ parts

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257

$0.368

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Andel Nordic

Denmark . 1,780 parts In-Stock

1+ parts

$2.289

100+ parts

-

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$2.197

10k+ parts

$2.197

1,780

$2.289

-

$2.197

$2.197

AZTECH Wire

Italy . 1,122 parts In-Stock

1+ parts

$10.050

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1,122

$10.050

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IDEA Electronic Components Group

UK . 1,011 parts In-Stock

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$15.353

100+ parts

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$13.818

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1,011

$15.353

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$13.818

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MKK Technologies

India . 298 parts In-Stock

1+ parts

$28.870

100+ parts

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298

$28.870

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DigiPath Technology Company

USA . 298 parts In-Stock

1+ parts

$28.870

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298

$28.870

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Corphita

USA . 3,919 parts In-Stock

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3,919

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Parana Technologies

USA . 2,348 parts In-Stock

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$18.357

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2,348

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$18.357

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Overview

Elevate your designs with the M74HCT125TTR from STMicroelectronics, a trusted name in semiconductor innovation. This versatile bus driver excels in delivering reliable performance across various applications, providing robust signal integrity with minimal power consumption. Its compact design and superior quality ensure seamless integration into your projects, enhancing efficiency and reliability. Experience the advantage of precision engineering and unlock new possibilities for your next big idea!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials enhances reliability and longevity, making this product suitable for various applications.

Propagation Delay At Nominal Supply: 32 ns

A fast propagation delay ensures high-speed data transfer, which is essential for efficient performance in data communication systems.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern circuit boards, ideal for space-constrained applications.

No. of Functions: 4

Having multiple functions in a single package reduces component count and saves board space, improving overall design efficiency.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized footprint, allowing for easier mounting and alignment on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common nominal supply voltage of 5V facilitates integration with a wide range of existing electronic designs.

Load Capacitance (CL): 50 pF

A relatively low load capacitance enables faster switching speeds, improving the overall performance of the electronic circuit.

Power Supplies (V): 5

This device operates with standard 5V power supplies, enhancing compatibility and simplifying design requirements.

No. of Terminals: 14

Fourteen terminals provide adequate connections for stable performance while keeping the design compact and manageable.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The slim profile and shrink pitch make it ideal for high-density applications where space is a premium.

Maximum I (ol): 6 Amp

With a high output current capacity of 6 Amps, this product is capable of driving larger loads, enhancing versatility in applications.

Propagation Delay (tpd): 41 ns

A propagation delay of 41 ns ensures that data signals are transmitted efficiently without significant delays, essential for high-speed applications.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures makes this product suitable for demanding environments and industrial applications.

Output Characteristics: 3-STATE

The 3-state output characteristic allows for greater flexibility in bus configurations, enabling effective sharing of data lines.

Minimum Operating Temperature: -55 °C

A wide temperature range with a minimum of -55 °C ensures reliability in extreme cold conditions, perfect for military and aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish enhances corrosion resistance and ensures better conductivity, improving the overall reliability of connections.

Terminal Position: DUAL

Dual terminal positioning provides options for layout flexibility in circuit design, facilitating easier integration.

No. of Ports: 2

Two ports facilitate connection to multiple devices, allowing for more complex system designs and enabling peer-to-peer communication.

Maximum Seated Height: 1.2 mm

A low seated height supports compact designs, making this product suitable for thin-device applications.

Width: 4.4 mm

This narrow width supports dense circuit layouts, ensuring efficiency in space-limited applications.

Output Polarity: TRUE

A true output polarity ensures compatibility with a wide range of logic levels, making this product versatile in various applications.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V allows for operation with slightly less than the nominal supply, enabling flexibility in power supply options.

Length: 5 mm

A compact length contributes to the overall miniaturization of circuit designs, critical in modern electronics where space is limited.

Temperature Grade: MILITARY

Military-grade specifications guarantee high reliability and performance in extreme conditions, suitable for critical applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, making this product energy-efficient during operation.

Terminal Form: GULL WING

Gull wing terminals allow for easy soldering and assembly, reducing manufacturing complexity and potential errors.

Packing Method: TR

Tape and reel (TR) packaging ensures efficient automated handling during assembly, streamlining production processes.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm enables denser mounting on the PCB, optimizing space and increasing design capabilities.

Control Type: ENABLE LOW

Low-enabled control simplifies interfacing with microcontrollers and other logic devices, improving design efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage allows for slight fluctuations in power supply, increasing the robustness of the design.

Technical Specifications

Bus Driver & Transceivers M74HCT125TTR attributes and parameters. Explore more Bus Driver & Transceivers devices from STMicroelectronics

Specs

Control Type:

ENABLE LOW

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

No. of Bits:

1

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

32 ns

Propagation Delay (tpd):

41 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

M74HCT125TTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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