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M27C4002-70C6

STMicroelectronics

M27C4002-70C6 by STMicroelectronics

M27C4002-70C6 by STMicroelectronics is a 256Kx16 OTP ROM with a max access time of 70 ns, operating at 5V. It features a square chip carrier package and operates in industrial temperatures from -40 °C to 85 °C. Ideal for applications requiring reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,954 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,106 parts In-Stock

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2,106

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ComSIT USA

USA . 2,106 parts In-Stock

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2,106

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Digiode

USA . 2,097 parts In-Stock

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Anansix

USA . 162 parts In-Stock

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162

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,334 parts In-Stock

1+ parts

$5.012

100+ parts

-

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$4.511

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2,334

$5.012

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$4.511

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Microchip USA

USA . 299 parts In-Stock

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$7.476

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299

$7.476

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MKK Technologies

India . 1,112 parts In-Stock

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$9.425

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$9.425

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DigiPath Technology Company

USA . 1,112 parts In-Stock

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$9.425

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$9.425

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AZTECH Wire

Italy . 441 parts In-Stock

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$18.640

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441

$18.640

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Component Stockers USA

USA . 395 parts In-Stock

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$99.990

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395

$99.990

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iodParts Technologies Inc.

India . 2,106 parts In-Stock

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Parana Technologies

USA . 2,071 parts In-Stock

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$5.993

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$5.993

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Corphita

USA . 1,731 parts In-Stock

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Overview

Unleash the power of reliable memory solutions with the M27C4002-70C6 from STMicroelectronics. Renowned for exceptional quality, STMicroelectronics delivers robust OTP ROM technology designed for demanding applications across various industries. With outstanding performance in extreme temperatures and a compact package, this chip ensures seamless integration and efficiency, providing your projects with unmatched reliability and long-lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction offers reliable performance and protection against environmental factors, making it suitable for a range of applications.

Surface Mount: YES

Surface mount technology allows for efficient use of board space and simplifies the assembly process, enhancing production efficiency.

Package Shape: SQUARE

The square package shape provides uniformity and ease of layout on circuit boards, which aids in overall design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access as it does not require a synchronized clock, leading to improved performance in data retrieval.

Input/Output Type: COMMON

The common I/O type simplifies the interface design, making it easier to integrate with other components in the system.

Nominal Supply Voltage / Vsup: 5 V

A nominal operating voltage of 5 V is widely used, ensuring compatibility with a vast array of existing systems and components.

Power Supplies (V): 5

This single voltage requirement for power supplies reduces design complexity and overall system costs.

No. of Terminals: 44

With 44 terminals, this device offers plenty of connectivity options, facilitating various configurations in complex electronic designs.

Package Style (Meter): CHIP CARRIER

Chip carrier packages provide good thermal conductivity and allow for easy integration into automotive and industrial applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product is versatile enough for many industrial environments that require high-temperature resilience.

Organization: 256KX16

The organization format allows for efficient data storage and retrieval, enabling complex applications to be executed reliably.

Output Characteristics: 3-STATE

3-state output allows for multiple devices to be connected on the same bus, improving system design flexibility and reducing pin count needs.

Minimum Operating Temperature: -40 °C

A minimum operating temperature of -40 °C ensures reliable performance in extreme environments, making it ideal for automotive and industrial applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish adds to the longevity of the device by improving solderability and reducing the risk of oxidation.

Terminal Position: QUAD

Quad terminal positioning optimizes space usage on printed circuit boards while simplifying trace routing.

Maximum Seated Height: 4.57 mm

A low seated height of 4.57 mm allows for compact designs and integration into space-constrained applications.

Width: 16.586 mm

A width of 16.586 mm fits well in standard PCB layouts and eases manufacturing processes.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5 V, the device provides flexibility in power supply design and can operate in various scenarios.

Length: 16.586 mm

The length of 16.586 mm is consistent with the standard chip carrier size, ensuring compatibility with most PCB designs.

Temperature Grade: INDUSTRIAL

Industrial temperature grade characterizes the device to perform reliably in harsh conditions, making it suitable for critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high density, which is critical for energy-efficient designs.

Parallel or Serial: PARALLEL

The parallel interface allows for faster data transmission, making it ideal for applications requiring rapid data access.

Terminal Form: J BEND

J bend terminals facilitate ease of soldering and improve mechanical stability when mounted on PCBs.

Maximum Supply Current: 70 mA

With a maximum supply current of 70 mA, it is compatible with low-power applications, ensuring efficiency.

No. of Words: 262144 words

The capacity to store 262,144 words makes this OTP ROM suitable for applications requiring significant data storage.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and integration into broader data architectures.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm is standard for many applications, easing incorporation into existing designs.

No. of Words Code: 256K

The 256K word code supports complex functionalities, enhancing the versatility of the device in various implementations.

Maximum Supply Voltage (Vsup): 5.5 V

Ability to handle up to 5.5 V allows for a margin of flexibility in power supply design, accommodating variations in system voltage.

Memory Density: 4194304 bit

This high memory density provides ample storage capacity for a wide range of applications, increasing its usability.

Memory IC Type: OTP ROM

As an OTP (One-Time Programmable) ROM, this device is ideal for applications where configuration data is programmed once and used thereafter.

Maximum Standby Current: 0.0001 Amp

0.0001 Amp standby current ensures ultra-low power consumption during idle times, making it excellent for power-sensitive applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns allows for quick read operations, improving overall system responsiveness and performance.

Technical Specifications

OTP ROM M27C4002-70C6 attributes and parameters. Explore more OTP ROM devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J44

JESD-609 Code:

e3

Length:

16.586 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.586 mm

Trade Compliance

M27C4002-70C6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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