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L6615N

STMicroelectronics

L6615N by STMicroelectronics

L6615N by STMicroelectronics is a versatile power management IC with a nominal voltage of 12V and operates in temperatures from -40 °C to 85 °C. It features an adjustable threshold and supports up to 22V, making it ideal for industrial applications. With its compact design and low supply current of 6mA, it's perfect for efficient power supply circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,515 parts In-Stock

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3,515

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Digiode

USA . 2,108 parts In-Stock

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2,108

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Anansix

USA . 1,263 parts In-Stock

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1,263

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Distributors (Availability)

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Microchip USA

USA . 114 parts In-Stock

1+ parts

$5.304

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-

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114

$5.304

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IDEA Electronic Components Group

UK . 1,343 parts In-Stock

1+ parts

$9.601

100+ parts

-

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$8.641

10k+ parts

-

1,343

$9.601

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$8.641

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AZTECH Wire

Italy . 210 parts In-Stock

1+ parts

$10.390

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-

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210

$10.390

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$12.886

100+ parts

$11.726

1k+ parts

$10.567

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270

$12.886

$11.726

$10.567

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MKK Technologies

India . 1,806 parts In-Stock

1+ parts

$18.054

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1,806

$18.054

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DigiPath Technology Company

USA . 1,806 parts In-Stock

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$18.054

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1,806

$18.054

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Component Stockers USA

USA . 598 parts In-Stock

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$99.990

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598

$99.990

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 2,582 parts In-Stock

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2,582

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Parana Technologies

USA . 2,239 parts In-Stock

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$11.480

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2,239

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$11.480

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Vigor

Singapore . 1,453 parts In-Stock

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1,453

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Kepictronics

USA . 57 parts In-Stock

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Overview

Elevate your designs with the L6615N from STMicroelectronics—a trusted name in power management solutions. Known for exceptional quality, this versatile IC is perfect for a range of applications, ensuring reliable performance in even the most demanding environments. With its robust temperature range and adjustable threshold, the L6615N empowers engineers to optimize efficiency while delivering significant energy savings, making it an invaluable asset for any project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and cost-effectiveness, making the product suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and space-saving designs.

Nominal Supply Voltage (Vsup): 12 V

A nominal supply voltage of 12 V is ideal for a wide range of power supply applications.

Power Supplies: 12 V

Compatible with 12 V power supplies, this product is versatile and easy to integrate into existing systems.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity for various functions, offering flexibility in design.

Package Style (Meter): IN-LINE

In-line packaging is convenient for both assembly and circuit design, enhancing ease of use.

Maximum Operating Temperature: 85 °C

Operating at up to 85 °C makes this IC suitable for industrial environments where heat is a factor.

Minimum Operating Temperature: -40 °C

The ability to function at temperatures as low as -40 °C makes it ideal for extreme conditions.

Terminal Finish: MATTE TIN

MATTE TIN terminal finish ensures good solderability and long-term reliability.

Terminal Position: DUAL

Dual terminal positioning allows for improved layout flexibility and ease of circuit integration.

Maximum Seated Height: 5.08 mm

A low seated height enhances compatibility with compact designs, making it suitable for space-constrained applications.

Width: 7.62 mm

The compact width contributes to a smaller overall footprint on the PCB.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Being categorized as a power supply support circuit ensures its effectiveness in managing power requirements.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage increases its versatility across various devices and applications.

Maximum Time At Peak Reflow Temperature (s): 30

The product can withstand peak reflow temperatures of up to 30 seconds, ensuring reliability during assembly processes.

Peak Reflow Temperature: 260 °C

A high tolerance for peak reflow temperature assures compatibility with standard soldering techniques.

Temperature Grade: INDUSTRIAL

The industrial temperature grade indicates higher reliability and robustness for demanding applications.

Maximum Supply Current (Isup): 6 mA

With a maximum supply current of 6 mA, the IC is energy-efficient while providing sufficient performance.

Technology: BCDMOS

BCDMOS technology allows for high performance and low power consumption, making it effective for power management.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical support and is often preferred for high-reliability applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm facilitates easier placement and soldering during assembly.

Maximum Supply Voltage (Vsup): 22 V

Supporting up to 22 V allows for flexibility in various circuit configurations, accommodating different designs.

Adjustable Threshold: YES

The adjustable threshold provides designers with the ability to tailor functionality to specific application needs.

Technical Specifications

Power Management ICs L6615N attributes and parameters. Explore more Power Management ICs devices from STMicroelectronics

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

6 mA

Maximum Supply Voltage (Vsup):

22 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

NO

Technology:

BCDMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7.62 mm

Trade Compliance

L6615N Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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