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BYW77PI-150

STMicroelectronics

BYW77PI-150 by STMicroelectronics

BYW77PI-150 by STMicroelectronics is a high-efficiency rectifier diode with a max reverse recovery time of 0.05 µs, supporting up to 25 A output current. It operates b/w -40 °C and 150°C, making it ideal for demanding applications. Its isolated case connection ensures reliable performance in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,809 parts In-Stock

1+ parts

-

100+ parts

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4,809

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-

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Digiode

USA . 1,718 parts In-Stock

1+ parts

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-

1k+ parts

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1,718

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Anansix

USA . 370 parts In-Stock

1+ parts

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370

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,124 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

$0.129

10k+ parts

-

1,124

$0.144

-

$0.129

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MKK Technologies

India . 1,865 parts In-Stock

1+ parts

$0.270

100+ parts

-

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1,865

$0.270

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DigiPath Technology Company

USA . 1,865 parts In-Stock

1+ parts

$0.270

100+ parts

-

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1,865

$0.270

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Native Components

USA . 834 parts In-Stock

1+ parts

$1.548

100+ parts

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834

$1.548

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Northwest PG Solutions

USA . 853 parts In-Stock

1+ parts

$1.702

100+ parts

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853

$1.702

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Corphita

USA . 3,260 parts In-Stock

1+ parts

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3,260

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Parana Technologies

USA . 1,927 parts In-Stock

1+ parts

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100+ parts

$0.172

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1,927

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$0.172

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Overview

Elevate your projects with the BYW77PI-150 rectifier diode from STMicroelectronics, a trusted leader in semiconductor solutions. Engineered for superior efficiency and reliability, this high-performance diode excels in diverse applications, delivering remarkable power handling and thermal stability. With its robust design and minimal reverse recovery time, you can count on seamless operation in demanding environments. Choose the BYW77PI-150 for unparalleled value that drives your success forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance and protection against environmental factors, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies design and reduces the footprint on the circuit board, ideal for space-constrained applications.

Maximum Reverse Recovery Time: 0.05 us

The low reverse recovery time enhances the switching speed, improving efficiency in high-frequency applications.

Maximum Reverse Current: 25 uA

The low reverse current reduces power losses, contributing to improved efficiency and longer operational life.

Package Shape: RECTANGULAR

The rectangular shape allows for easier PCB layout, facilitating integration into compact electronic devices.

No. of Terminals: 2

Two terminals make the diode straightforward to integrate into various circuit designs with minimal complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides robust mechanical support, ensuring secure fixation in diverse applications.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for modern power applications, contributing to lower energy consumption.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this diode to function effectively in demanding thermal environments.

Minimum Operating Temperature: -40 °C

The extensive temperature range ensures reliability and performance in extreme environmental conditions.

Terminal Position: SINGLE

Single terminal position simplifies PCB design and reduces assembly costs.

Case Connection: ISOLATED

Isolated case connection enhances safety and reliability, crucial for high-power applications.

Maximum Power Dissipation: 25 W

A power dissipation capability of 25 W ensures that this diode can handle substantial loads effectively without failure.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it excels in converting alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.15 V

The low forward voltage drop minimizes energy loss during conduction, enhancing the overall efficiency of the circuit.

Maximum Output Current: 25 A

Supporting a maximum output current of 25 A makes this diode suitable for high-current applications, ensuring reliability under load.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides sturdy mechanical connections, ensuring durability in tough environments.

Maximum Repetitive Peak Reverse Voltage: 150 V

The ability to handle up to 150 V of reverse voltage makes this diode versatile for various voltage applications, adding flexibility to your design.

Maximum Non-Repetitive Peak Forward Current: 500 A

The capability to withstand a high non-repetitive peak forward current of 500 A means it can handle temporary surges, protecting your circuit from overload.

Diode Element Material: SILICON

The use of silicon provides excellent electrical characteristics and reliability, ensuring consistent performance over time.

Technical Specifications

Diodes & Rectifiers BYW77PI-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77PI-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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