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BYW77G-200-TR

STMicroelectronics

BYW77G-200-TR by STMicroelectronics

BYW77G-200-TR by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 25 A. It is designed for efficiency applications, operating b/w -40 to 150 °C, featuring a matte tin terminal finish and gull wing terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,053 parts In-Stock

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3,053

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Anansix

USA . 1,550 parts In-Stock

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1,550

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Bristol Electronics

USA . 1,219 parts In-Stock

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1,219

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Dan-Mar Components

USA . 1,219 parts In-Stock

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1,219

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ACDS - Activité Composants Distribution Service

France . 500 parts In-Stock

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500

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Digiode

USA . 57 parts In-Stock

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57

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IDEA Electronic Components Group

UK . 950 parts In-Stock

1+ parts

$0.139

100+ parts

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$0.125

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950

$0.139

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$0.125

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Native Components

USA . 205 parts In-Stock

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$0.185

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$0.177

205

$0.185

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$0.177

Northwest PG Solutions

USA . 1,662 parts In-Stock

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$0.203

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$0.179

1,662

$0.203

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$0.179

MKK Technologies

India . 1,145 parts In-Stock

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$0.261

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$0.261

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DigiPath Technology Company

USA . 1,145 parts In-Stock

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$0.261

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$0.261

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AZTECH Wire

Italy . 1,139 parts In-Stock

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$21.410

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$21.410

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 1,103 parts In-Stock

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Parana Technologies

USA . 975 parts In-Stock

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$0.166

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975

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$0.166

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Overview

Upgrade your efficiency with the BYW77G-200-TR by STMicroelectronics. This high-quality rectifier diode offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With a maximum output current of 25A and a maximum repetitive peak reverse voltage of 200V, this diode is designed to deliver consistent results even in the most demanding environments. Trust STMicroelectronics to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and protection for the diode, ensuring durability and longevity.

Config: SINGLE

Simplifies the circuit design and makes it easy to integrate into various applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort.

Maximum Reverse Recovery Time: 0.05 us

Ensures fast switching speeds and efficient operation of the diode.

Maximum Reverse Current: 25 uA

Provides low reverse leakage current, leading to high efficiency and minimal power loss.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on the PCB, optimizing space utilization.

No. of Terminals: 2

Simplifies the connection process and enhances the overall simplicity of the design.

Package Style (Meter): SMALL OUTLINE

Enables compact and efficient layout designs, ideal for space-constrained applications.

Application: EFFICIENCY

Designed specifically for applications where efficiency is a key requirement, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments, ensuring versatility in various applications.

Terminal Finish: Matte Tin (Sn)

Provides good electrical conductivity and solderability, ensuring reliable connections.

Terminal Position: SINGLE

Simplifies the connection process and ensures ease of use during installation.

Case Connection: CATHODE

Offers easy identification of polarity and simplifies circuit integration.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.15 V

Provides low forward voltage drop, leading to high efficiency and minimal power dissipation.

Maximum Output Current: 25 A

Capable of handling high currents, suitable for power applications that require high current ratings.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on the PCB, ensuring reliable connections.

Maximum Repetitive Peak Reverse Voltage: 200 V

Capable of withstanding high reverse voltages, making it suitable for a wide range of applications.

Maximum Non Repetitive Peak Forward Current: 200 A

Capable of handling high forward currents for short durations, ideal for transient overcurrent conditions.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and stability, ensuring long-term reliability and durability.

Technical Specifications

Diodes & Rectifiers BYW77G-200-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

BYW77G-200-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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