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BYW77P-50

STMicroelectronics

BYW77P-50 by STMicroelectronics

BYW77P-50 by STMicroelectronics is a silicon rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.05 µs and a peak reverse voltage of 50 V. It operates b/w -40 °C to 150°C with a power dissipation of 25 W. Ideal for applications requiring reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,376 parts In-Stock

1+ parts

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3,376

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Anansix

USA . 2,105 parts In-Stock

1+ parts

-

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2,105

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Digiode

USA . 339 parts In-Stock

1+ parts

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339

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ECAB

Sweden . 134 parts In-Stock

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134

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 929 parts In-Stock

1+ parts

$0.144

100+ parts

-

1k+ parts

$0.129

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-

929

$0.144

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$0.129

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MKK Technologies

India . 303 parts In-Stock

1+ parts

$0.270

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303

$0.270

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DigiPath Technology Company

USA . 303 parts In-Stock

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$0.270

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303

$0.270

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Native Components

USA . 262 parts In-Stock

1+ parts

$37.308

100+ parts

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10k+ parts

$35.816

262

$37.308

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-

$35.816

Northwest PG Solutions

USA . 1,862 parts In-Stock

1+ parts

$41.039

100+ parts

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1,862

$41.039

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Corphita

USA . 2,624 parts In-Stock

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2,624

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Parana Technologies

USA . 1,467 parts In-Stock

1+ parts

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100+ parts

$0.172

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1,467

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$0.172

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Overview

Elevate your designs with the BYW77P-50 by STMicroelectronics, a top-tier rectifier diode crafted for unmatched efficiency and reliability. Renowned for its exceptional quality, STMicroelectronics ensures this diode performs flawlessly across diverse applications, from power supplies to industrial systems. With its robust temperature range and impressive current capabilities, you gain peace of mind knowing your projects are backed by a trusted leader in semiconductor innovation. Choose BYW77P-50 for superior performance that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, making the diode reliable in various applications.

Config: SINGLE

Single configuration simplifies design and integration into circuits, enhancing ease of use.

Maximum Reverse Recovery Time: 0.05 µs

A low reverse recovery time allows for efficient switching, making it suitable for high-frequency applications.

Maximum Reverse Current: 25 µA

Low reverse current ensures minimal energy loss, improving overall efficiency in circuits.

Package Shape: RECTANGULAR

Rectangular package shape optimizes space in circuit designs, allowing for a more compact layout.

No. of Terminals: 2

Having two terminals simplifies the connection and integration into existing systems.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure attachment and stability, essential for robust applications.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes energy loss, making it ideal for power-sensitive applications.

Maximum Operating Temperature: 150 °C

High operating temperature enables use in demanding environments, enhancing thermal performance.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliability in extreme conditions, allowing for diverse application possibilities.

Terminal Position: SINGLE

Single terminal position simplifies layout design and reduces complexity in circuit boards.

Case Connection: CATHODE

Cathode connection facilitates easier circuit integration and performance in rectifier applications.

Maximum Power Dissipation: 25 W

Support for high power dissipation ensures that the diode can handle significant loads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.15 V

Relatively low forward voltage drop minimizes energy loss, contributing to higher efficiency in power systems.

Maximum Output Current: 25 A

High output current capability ensures suitability for a variety of high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides excellent mechanical stability and ease of soldering in PCB applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

Robust voltage rating ensures reliability in applications involving substantial reverse voltage spikes.

Maximum Non-Repetitive Peak Forward Current: 500 A

Ability to handle high non-repetitive current makes this diode effective for transient voltage events.

Diode Element Material: SILICON

Silicon-based diodes allow for a good balance of performance and cost, making them widely used in the industry.

Technical Specifications

Diodes & Rectifiers BYW77P-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77P-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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