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BYW77-100

STMicroelectronics

BYW77-100 by STMicroelectronics

BYW77-100 by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.05 us and max output current of 25 A. It is designed for efficiency applications, with a max power dissipation of 33 W and operating temperature range from -40 to 150 °C.

Median Price

$6.552

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 25 parts In-Stock

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$6.552

100+ parts

$3.276

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25

$6.552

$3.276

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Anansix

USA . 1,313 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1,113 parts In-Stock

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Digiode

USA . 1,065 parts In-Stock

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1,065

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J2 Sourcing AB

Sweden . 725 parts In-Stock

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725

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Vyrian

USA . 188 parts In-Stock

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188

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ECAB

Sweden . 71 parts In-Stock

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Lakeland Logistics Inc

USA . 25 parts In-Stock

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25

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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20

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LittleDiode

UK . 12 parts In-Stock

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ICP Electronique

France . 2 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,653 parts In-Stock

1+ parts

$0.051

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$0.046

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$0.051

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$0.046

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Native Components

USA . 571 parts In-Stock

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$0.065

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$0.062

571

$0.065

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$0.062

Northwest PG Solutions

USA . 210 parts In-Stock

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$0.071

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$0.063

210

$0.071

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$0.063

MKK Technologies

India . 1,673 parts In-Stock

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$0.095

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$0.095

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DigiPath Technology Company

USA . 1,673 parts In-Stock

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$0.095

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$0.095

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Corphita

USA . 2,322 parts In-Stock

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Parana Technologies

USA . 2,097 parts In-Stock

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$0.060

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2,097

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$0.060

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Infinite Electronics LLP (Excess)

. 335 parts In-Stock

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335

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Assy Fe

Spain . 173 parts In-Stock

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Perfect Parts

USA . 125 parts In-Stock

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125

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Cyclops Electronics Ltd (Excess)

UK . 56 parts In-Stock

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Glotronic Ltd.

UK . 45 parts In-Stock

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Overview

Upgrade your efficiency with the BYW77-100 from STMicroelectronics, a top-quality manufacturer in the Diodes & Rectifiers category. This RECTIFIER DIODE offers a speedy 0.05 us Maximum Reverse Recovery Time and can handle a powerful 25 A Maximum Output Current. With a robust METAL body and a rugged POST/STUD MOUNT package style, this diode is built to last. Ideal for applications requiring high power dissipation and temperature resistance, this diode provides reliable performance and value for all your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity and heat dissipation, ensuring stable performance even at high operating temperatures.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time reduces switching losses and improves efficiency in high-frequency applications.

Maximum Reverse Current: 25 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

With a wide operating temperature range, this diode can be used in various environmental conditions without compromising performance.

Maximum Power Dissipation: 33 W

High power dissipation capability allows the diode to handle high current and voltage levels without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making them ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 25 A

High output current rating allows the diode to handle large amounts of current, making it suitable for high-power applications.

Technical Specifications

Diodes & Rectifiers BYW77-100 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

O-MUPM-D1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Power Dissipation:

33 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77-100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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