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BYW77PI-100

STMicroelectronics

BYW77PI-100 by STMicroelectronics

BYW77PI-100 from STMicroelectronics is a silicon rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.05 µs, supports up to 25 A output current, and operates b/w -40 °C to 150°C. Ideal for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,902 parts In-Stock

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1,902

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Vyrian

USA . 1,584 parts In-Stock

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1,584

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Digiode

USA . 122 parts In-Stock

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122

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 390 parts In-Stock

1+ parts

$0.166

100+ parts

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$0.149

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390

$0.166

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$0.149

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MKK Technologies

India . 1,572 parts In-Stock

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$0.311

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$0.311

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DigiPath Technology Company

USA . 1,572 parts In-Stock

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$0.311

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1,572

$0.311

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Native Components

USA . 215 parts In-Stock

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$1.718

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215

$1.718

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Northwest PG Solutions

USA . 172 parts In-Stock

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$1.890

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$1.890

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Corphita

USA . 4,585 parts In-Stock

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4,585

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Parana Technologies

USA . 1,634 parts In-Stock

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$0.198

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1,634

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$0.198

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Overview

Unlock exceptional performance with the BYW77PI-100 diode from STMicroelectronics—a name synonymous with quality and innovation. Designed for efficiency, this robust rectifier diode excels in diverse applications, ensuring longevity and reliability under demanding conditions. With superior power handling and rapid response times, it empowers your projects while minimizing energy loss. Choose STMicroelectronics for cutting-edge solutions that elevate your designs and enhance your bottom line.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single configuration simplifies usage and integration into circuits, making it a practical choice for various designs.

Maximum Reverse Recovery Time: 0.05 µs

A low reverse recovery time enhances efficiency and reduces switching losses, making this diode ideal for high-frequency applications.

Maximum Reverse Current: 25 µA

Minimal reverse leakage current contributes to improved efficiency and lower power loss during operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient spacing and arrangement on printed circuit boards, optimizing layout design.

No. of Terminals: 2

Two terminals provide simplicity in connection and integration with other components, facilitating easier assembly in circuits.

Package Style: FLANGE MOUNT

The flange mount style ensures secure installation and reliable electrical connections, enhancing overall performance and stability.

Application: EFFICIENCY

Designed for high efficiency, this diode minimizes energy losses, making it suitable for energy-conscious applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance in demanding environments.

Minimum Operating Temperature: -40 °C

With a low operating temperature threshold, this diode is versatile and can function in extreme conditions.

Terminal Position: SINGLE

Single terminal positioning simplifies the physical layout and can help reduce the complexity in circuit designs.

Case Connection: ISOLATED

An isolated case connection enhances safety and prevents unintended short-circuits, making it safer for use in applications.

Maximum Power Dissipation: 25 W

The ability to dissipate significant power ensures that the diode can handle high loads without overheating, enhancing reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specialized for converting alternating current (AC) to direct current (DC), making it essential in power conversion applications.

Maximum Forward Voltage (VF): 1.15 V

A moderate forward voltage drop ensures efficient current conduction with minimal energy loss, beneficial in power-sensitive applications.

Maximum Output Current: 25 A

A high output current rating allows for its use in power applications, ensuring it can handle substantial loads.

Terminal Form: THROUGH-HOLE

The through-hole terminal form is ideal for robust mechanical connections and easy soldering in diverse circuit designs.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage enables the diode to operate effectively in high-voltage environments, enhancing its applicability.

Maximum Non-Repetitive Peak Forward Current: 500 A

The capability to handle high non-repetitive forward current is crucial for surge conditions, making this diode highly resilient.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and effectiveness in electronic components, ensuring durable performance.

Technical Specifications

Diodes & Rectifiers BYW77PI-100 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77PI-100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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