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BYW77P-150

STMicroelectronics

BYW77P-150 by STMicroelectronics

BYW77P-150 by STMicroelectronics is a silicon rectifier diode designed for efficiency in various applications. It features a max reverse recovery time of 0.05 µs, supports up to 25 A output current, and operates b/w -40 °C to 150°C. Ideal for high-performance power management solutions.

Median Price

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Lifecycle Status

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5

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1k+

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Digiode

USA . 2,228 parts In-Stock

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Vyrian

USA . 1,479 parts In-Stock

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Pegasus Components GmbH

Germany . 883 parts In-Stock

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Anansix

USA . 874 parts In-Stock

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ECAB

Sweden . 8 parts In-Stock

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IDEA Electronic Components Group

UK . 394 parts In-Stock

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$0.079

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$0.071

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MKK Technologies

India . 2,017 parts In-Stock

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$0.149

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DigiPath Technology Company

USA . 2,017 parts In-Stock

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Corphita

USA . 4,019 parts In-Stock

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Northwest PG Solutions

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Parana Technologies

USA . 2,004 parts In-Stock

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$0.095

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Native Components

USA . 643 parts In-Stock

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Overview

Unlock unparalleled efficiency with the BYW77P-150 diode from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for exceptional performance in demanding applications, this rectifier diode boasts remarkable reliability and a robust temperature range, ensuring optimal results in various environments. Enhance your projects with cutting-edge technology that promises low reverse recovery times and minimal power loss, giving you the edge in performance and durability. Elevate your designs with STMicroelectronics' commitment to quality and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent insulation and resistance to environmental factors, ensuring durability and reliability in various conditions.

Config: SINGLE

A single diode configuration simplifies the design and reduces the footprint in circuit applications, making it a practical choice for compact designs.

Maximum Reverse Recovery Time: 0.05 us

A low reverse recovery time enhances efficiency and performance in high-speed switching applications, minimizing power loss during transitions.

Maximum Reverse Current: 25 uA

A low reverse current contributes to better overall efficiency and reduces unwanted power loss during operation, ideal for high-efficiency designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of PCB space and facilitates easier integration into various circuit layouts.

No. of Terminals: 2

With only two terminals, this diode is straightforward to implement, simplifying circuit connections and reducing complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options, enhancing mechanical stability and ease of installation in various applications.

Application: EFFICIENCY

Designed specifically for efficiency applications, this diode delivers superior performance in reducing power loss and improving overall energy utilization.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to function reliably in demanding environments without derating, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The capability to operate in temperatures as low as -40 °C enables use in extreme conditions, broadening the range of applicable environments.

Terminal Position: SINGLE

Single terminal position simplifies connections and reduces potential errors during installation, enhancing user-friendliness.

Case Connection: CATHODE

Having a direct connection to the cathode streamlines circuit design and enables more intuitive configurations.

Maximum Power Dissipation: 25 W

A high power dissipation rating allows for increased load handling, making this diode suitable for high-power applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it an essential component in power supply and rectification circuits.

Maximum Forward Voltage (VF): 1.15 V

A relatively low forward voltage ensures minimal energy loss when conducting current, promoting efficiency in power circuits.

Maximum Output Current: 25 A

With a maximum output current of 25 A, this diode can handle significant loads, making it versatile across various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical connections and improved thermal performance, ideal for high-reliability applications.

Maximum Repetitive Peak Reverse Voltage: 150 V

A high maximum repetitive peak reverse voltage ensures that this diode can withstand significant voltage spikes, enhancing its reliability in transient conditions.

Maximum Non-Repetitive Peak Forward Current: 500 A

The ability to handle high non-repetitive forward currents makes this diode suitable for applications with brief surges, ensuring performance under dynamic conditions.

Diode Element Material: SILICON

Silicon's widespread use in diodes is attributed to its excellent electrical properties, providing reliable performance and longevity in various applications.

Technical Specifications

Diodes & Rectifiers BYW77P-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77P-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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