Loading...

BYW77P-100

STMicroelectronics

BYW77P-100 by STMicroelectronics

BYW77P-100 by STMicroelectronics is a silicon rectifier diode designed for efficiency in various applications. It features a max reverse recovery time of 0.05 µs, supports up to 25 A output current, and operates b/w -40 °C to 150°C. Ideal for high-performance power management solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,133

-

-

-

-

Digiode

USA . 1,523 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,523

-

-

-

-

Vyrian

USA . 323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

323

-

-

-

-

ECAB

Sweden . 285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

285

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 430 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

$0.009

10k+ parts

-

430

$0.010

-

$0.009

-

MKK Technologies

India . 663 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

663

$0.019

-

-

-

DigiPath Technology Company

USA . 663 parts In-Stock

1+ parts

$0.019

100+ parts

-

1k+ parts

-

10k+ parts

-

663

$0.019

-

-

-

Native Components

USA . 808 parts In-Stock

1+ parts

$1.174

100+ parts

-

1k+ parts

-

10k+ parts

-

808

$1.174

-

-

-

Northwest PG Solutions

USA . 1,360 parts In-Stock

1+ parts

$1.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,360

$1.292

-

-

-

Corphita

USA . 2,665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,665

-

-

-

-

Parana Technologies

USA . 1,544 parts In-Stock

1+ parts

-

100+ parts

$0.012

1k+ parts

-

10k+ parts

-

1,544

-

$0.012

-

-

Overview

Unlock unparalleled efficiency with the BYW77P-100 from STMicroelectronics. Crafted for reliability, this rectifier diode excels in demanding applications, ensuring optimal performance even in extreme conditions. With its robust construction and minimal reverse recovery time, it delivers exceptional power management while enhancing system longevity. Choose STMicroelectronics for quality you can trust, and experience unmatched benefits that drive your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and thermal stability, making this diode suitable for various applications.

Config: SINGLE

As a single diode, this component is ideal for applications where space is limited and a simple rectification solution is required.

Maximum Reverse Recovery Time: 0.05 us

A fast reverse recovery time enhances efficiency in high-speed switching applications, reducing power losses.

Maximum Reverse Current: 25 uA

Low reverse current minimizes leakage and improves overall power efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, facilitating compact device designs.

No. of Terminals: 2

Having just two terminals simplifies the design and integration into circuits, allowing for easy installation and replacement.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting and stable connection, particularly in high-vibration environments.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications that require low power loss and high reliability.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to function reliably in demanding environments without performance degradation.

Minimum Operating Temperature: -40 °C

The ability to operate in extreme cold makes this diode reliable for outdoor and low-temperature applications.

Terminal Position: SINGLE

Single terminal positioning simplifies integration and reduces complexity in circuit design.

Case Connection: CATHODE

A cathode case connection provides straightforward orientation for integration into rectifying circuits.

Maximum Power Dissipation: 25 W

The capability to dissipate up to 25 watts of power ensures durability under heavy load conditions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.15 V

The low forward voltage drop enhances efficiency by reducing energy losses when the diode is forward-biased.

Maximum Output Current: 25 A

A high output current rating makes this diode capable of handling significant loads, making it suitable for power electronics.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and stability in the PCB mounting process.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high peak reverse voltage capability allows this diode to be used in circuits with significant reverse voltage conditions.

Maximum Non-Repetitive Peak Forward Current: 500 A

The ability to handle very high non-repetitive currents makes this diode robust and suitable for applications with inrush currents.

Diode Element Material: SILICON

Silicon diode materials are known for their excellent electrical characteristics, contributing to the reliability and efficiency of the device.

Technical Specifications

Diodes & Rectifiers BYW77P-100 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

25 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYW77P-100 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19