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BYV541V-150

STMicroelectronics

BYV541V-150 by STMicroelectronics

BYV541V-150 by STMicroelectronics is a RECTIFIER DIODE with 2 ELEMENTS, offering a Max Reverse Recovery Time of 0.06 us and Max Output Current of 50 A. It is used for EFFICIENCY applications, with a Max Operating Temperature of 150 °C and Reverse Test Voltage of 150 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,154

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-

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Anansix

USA . 968 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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968

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Digiode

USA . 566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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566

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ECAB

Sweden . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,281 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

$0.079

10k+ parts

-

2,281

$0.087

-

$0.079

-

MKK Technologies

India . 453 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

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10k+ parts

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453

$0.164

-

-

-

DigiPath Technology Company

USA . 453 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

-

10k+ parts

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453

$0.164

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Native Components

USA . 922 parts In-Stock

1+ parts

$495.000

100+ parts

$485.100

1k+ parts

$480.150

10k+ parts

$475.200

922

$495.000

$485.100

$480.150

$475.200

Northwest PG Solutions

USA . 1,251 parts In-Stock

1+ parts

$544.500

100+ parts

-

1k+ parts

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10k+ parts

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1,251

$544.500

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Parana Technologies

USA . 1,880 parts In-Stock

1+ parts

-

100+ parts

$0.104

1k+ parts

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10k+ parts

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1,880

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$0.104

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

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Corphita

USA . 895 parts In-Stock

1+ parts

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895

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Overview

Unleash the power of efficiency with the BYV541V-150 by STMicroelectronics. Crafted with precision and reliability in mind, this diode promises top-notch quality for all your electronic needs. Whether you're looking to optimize performance or enhance energy savings, this product is designed to exceed expectations. With a maximum reverse voltage of 150V and a maximum forward current of 50A, the BYV541V-150 is the perfect solution for applications that demand superior performance and reliability. Upgrade your electronics today and experience the benefits of cutting-edge technology with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection, making the diodes durable and reliable for long-term use.

Maximum Reverse Recovery Time: 0.06 us

The low reverse recovery time ensures efficient switching and minimal power loss in the circuit, ideal for high-speed applications.

Maximum Reverse Current: 50 uA

Low reverse current helps in reducing leakage and improving overall efficiency of the diode.

Maximum Output Current: 50 A

High maximum output current capability allows for handling large currents, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the diode to function effectively in various environments without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product suitable for power supply and rectification applications.

Technical Specifications

Diodes & Rectifiers BYV541V-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, HIGH SURGE CAPABILITY

Application:

EFFICIENCY

Config:

2 BANKS, SEPARATE, 1 ELEMENT

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PUFM-D4

Maximum Non Repetitive Peak Forward Current:

1000 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

50 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.06 us

Reverse Test Voltage:

150 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

BYV541V-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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