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BYV52PI-150

STMicroelectronics

BYV52PI-150 by STMicroelectronics

BYV52PI-150 by STMicroelectronics is a common cathode diode with 2 elements. It has a max reverse recovery time of 0.05 us and a max output current of 30 A. Ideal for efficiency applications, it operates b/w -40 to 150 °C and can handle up to 45 W power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,785 parts In-Stock

1+ parts

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2,785

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Vyrian

USA . 2,409 parts In-Stock

1+ parts

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2,409

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Anansix

USA . 1,812 parts In-Stock

1+ parts

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1,812

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,807 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

$0.068

10k+ parts

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1,807

$0.075

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$0.068

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MKK Technologies

India . 1,915 parts In-Stock

1+ parts

$0.142

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1,915

$0.142

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DigiPath Technology Company

USA . 1,915 parts In-Stock

1+ parts

$0.142

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1,915

$0.142

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Corphita

USA . 2,222 parts In-Stock

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2,222

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Parana Technologies

USA . 1,923 parts In-Stock

1+ parts

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$0.090

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1,923

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$0.090

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Native Components

USA . 782 parts In-Stock

1+ parts

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782

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Northwest PG Solutions

USA . 695 parts In-Stock

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695

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Overview

Enhance the efficiency of your electronic devices with the BYV52PI-150 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality diodes & rectifiers that are perfect for a wide range of applications. With a maximum power dissipation of 45W and a common cathode configuration, this product offers exceptional value and performance to customers looking to optimize their systems. Upgrade your electronics with the BYV52PI-150 and experience the superior quality and reliability that STMicroelectronics is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various industrial applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit integration and efficient current flow.

Maximum Reverse Recovery Time: 0.05 us

Ensures fast switching speeds, ideal for high-speed applications.

Maximum Reverse Current: 25 uA

Ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in electronic circuits.

No. of Terminals: 3

Provides multiple connection points for versatile circuit configurations.

Package Style (Meter): FLANGE MOUNT

Allows for secure and stable mounting in electronic devices.

Application: EFFICIENCY

Designed for applications where efficiency is crucial, such as power supply systems.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature conditions, ensuring reliability in various environments.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures a secure electrical connection.

Terminal Position: SINGLE

Simplifies circuit design and installation.

Case Connection: ISOLATED

Prevents electrical interference and ensures safe operation.

Maximum Power Dissipation: 45 W

Can handle high power loads, suitable for demanding applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1 V

Ensures low voltage drop, minimizing power loss.

Maximum Output Current: 30 A

Capable of handling high currents, suitable for power electronics applications.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to circuit boards.

No. of Elements: 2

Provides redundancy and ensures reliable operation.

Maximum Repetitive Peak Reverse Voltage: 150 V

Can handle high reverse voltages, suitable for various circuit designs.

Maximum Non Repetitive Peak Forward Current: 500 A

Capable of handling high peak currents, ensuring reliability under transient conditions.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability, suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers BYV52PI-150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

45 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYV52PI-150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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