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BYV52-200FSYHRB

STMicroelectronics

BYV52-200FSYHRB by STMicroelectronics

BYV52-200FSYHRB by STMicroelectronics is a fast recovery rectifier diode with a max reverse recovery time of 0.055 µs and can handle up to 30 A output current. It operates at temperatures up to 150 °C and supports a peak reverse voltage of 200 V. Ideal for high-efficiency applications, it features a flange mount design for easy integration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,749 parts In-Stock

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3,749

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Vyrian

USA . 2,121 parts In-Stock

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2,121

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Anansix

USA . 573 parts In-Stock

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573

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 21 parts In-Stock

1+ parts

$0.140

100+ parts

-

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$0.126

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21

$0.140

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$0.126

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MKK Technologies

India . 96 parts In-Stock

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$0.263

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96

$0.263

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DigiPath Technology Company

USA . 96 parts In-Stock

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$0.263

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96

$0.263

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Corphita

USA . 4,200 parts In-Stock

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4,200

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Parana Technologies

USA . 1,945 parts In-Stock

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$0.167

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1,945

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$0.167

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Native Components

USA . 869 parts In-Stock

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869

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Northwest PG Solutions

USA . 9 parts In-Stock

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Overview

Elevate your designs with the BYV52-200FSYHRB rectifier diode from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance diode ensures rapid recovery and exceptional reliability, perfect for demanding applications like power supplies and automotive systems. With its robust metal package and superior thermal management, enjoy enhanced efficiency and longevity, empowering you to create cutting-edge solutions that stand out in today’s competitive market.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent thermal conductivity, ensuring efficient heat dissipation and enhancing reliability during operation.

Config: SINGLE

The single configuration allows for easy integration into circuits, making it ideal for applications where space and simplicity are crucial.

Maximum Reverse Recovery Time: 0.055 us

A low reverse recovery time enhances switching efficiency, making this diode suitable for fast switching applications, reducing power loss.

Package Shape: SQUARE

The square shape of the package optimizes space utilization on PCBs, enabling compact designs.

Number of Terminals: 3

Having three terminals facilitates versatile mounting options and simplifies circuit design for easier integration into various applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers secure installation options, promoting stability and reliability in different environmental conditions.

Application: FAST RECOVERY

Designed for fast recovery, this diode is ideal for applications requiring short switching times, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

This high maximum operating temperature ensures continued performance in demanding environments, increasing the diode's versatility in various applications.

Terminal Position: SINGLE

The single terminal position simplifies the layout for circuit design, streamlining assembly processes and reducing potential errors.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is well-suited for converting AC to DC power, making it an essential component in power supply designs.

Maximum Forward Voltage (VF): 1.01 V

A relatively low forward voltage drop minimizes energy loss and heat generation during operation, contributing to overall efficiency in power applications.

Maximum Output Current: 30 A

With a maximum output current of 30 A, this diode is capable of handling significant current loads, suitable for a range of robust applications.

Terminal Form: PIN/PEG

The pin/peg terminal form provides secure and reliable connections, facilitating easy and reliable integration into circuits.

Maximum Repetitive Peak Reverse Voltage: 200 V

A maximum repetitive peak reverse voltage of 200 V allows for flexibility in voltage-sensitive applications, accommodating a variety of circuit designs.

Maximum Non-Repetitive Peak Forward Current: 400 A

The ability to handle a maximum non-repetitive peak forward current of 400 A makes this diode capable of withstanding brief surges, enhancing protection in fault conditions.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent overall performance, stability, and reliability in various electronic applications.

Technical Specifications

Diodes & Rectifiers BYV52-200FSYHRB attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.01 V

JEDEC-95 Code:

TO-254AA

JESD-30 Code:

S-MSFM-P3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.055 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYV52-200FSYHRB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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