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BYV52-200FYT

STMicroelectronics

BYV52-200FYT by STMicroelectronics

BYV52-200FYT by STMicroelectronics is a single rectifier diode designed for medium voltage fast recovery applications. It features a max reverse recovery time of 0.055 µs, 200 V peak reverse voltage, and operates up to 150 °C. Ideal for high-efficiency circuits in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,872 parts In-Stock

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2,872

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Anansix

USA . 2,043 parts In-Stock

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2,043

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Vyrian

USA . 1,097 parts In-Stock

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1,097

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,129 parts In-Stock

1+ parts

$0.158

100+ parts

-

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$0.142

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1,129

$0.158

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$0.142

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MKK Technologies

India . 659 parts In-Stock

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$0.298

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659

$0.298

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DigiPath Technology Company

USA . 659 parts In-Stock

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$0.298

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659

$0.298

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Corphita

USA . 4,197 parts In-Stock

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Northwest PG Solutions

USA . 1,329 parts In-Stock

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1,329

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Parana Technologies

USA . 920 parts In-Stock

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$0.189

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920

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$0.189

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Native Components

USA . 479 parts In-Stock

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479

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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$0.048

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$0.044

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$0.044

200

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$0.048

$0.044

$0.044

Overview

Elevate your projects with the BYV52-200FYT from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance rectifier diode ensures reliability and efficiency in medium voltage applications, making it ideal for demanding environments. Its robust metal construction and fast recovery time enhance your circuit's performance, while STMicroelectronics' commitment to quality guarantees long-lasting value. Choose the BYV52-200FYT for superior technology that drives your success!

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides enhanced thermal management, ensuring better heat dissipation and reliability, which is crucial for high-performance applications.

Config: SINGLE

A single configuration helps minimize space requirements on the circuit board, making this diode suitable for compact designs.

Maximum Reverse Recovery Time: 0.055 us

A low reverse recovery time offers reduced switching losses, making this diode ideal for high-frequency applications and improving overall circuit efficiency.

Maximum Reverse Current: 25 uA

A low reverse current enhances energy efficiency and reduces power losses in the circuit, contributing to better performance and longer lifespan.

Package Shape: SQUARE

The square shape allows for efficient use of board space and facilitates easy mounting, which is beneficial in various design layouts.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, allowing for easier integration with other components.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting to the PCB, enhancing mechanical stability and reliability in various application environments.

Application: MEDIUM VOLTAGE FAST RECOVERY

Designed specifically for medium voltage applications, this diode excels in scenarios where fast recovery is necessary, enhancing performance in critical applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this device to function effectively in demanding environments, broadening its application scope.

Terminal Position: SINGLE

Single terminal position makes it straightforward for PCB layout and integration, streamlining the design process.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents interference with surrounding components, improving reliability and performance.

Reference Standard: EUROPEAN SPACE AGENCY

Meeting stringent standards set by the European Space Agency ensures high reliability and performance in critical applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently handles alternating current rectification, making it essential for power conversion applications.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop minimizes power loss during operation, enhancing efficiency in energy-constrained applications.

Technology: AVALANCHE

Avalanche technology enables the diode to handle high voltage spikes, providing added robustness in challenging electrical environments.

Terminal Form: PIN/PEG

The pin/peg terminal form allows for easy soldering and quick assembly, facilitating efficient manufacturing processes.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a high voltage rating, this diode is suitable for medium voltage applications, ensuring reliable operation in demanding conditions.

Maximum Non-Repetitive Peak Forward Current: 400 A

The ability to handle high peak forward currents makes this diode capable of sustaining significant power loads, ideal for rigorous applications.

Diode Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency, ensuring consistent performance across various applications.

Technical Specifications

Diodes & Rectifiers BYV52-200FYT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

MEDIUM VOLTAGE FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

TO-254AA

JESD-30 Code:

S-MSFM-P3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

EUROPEAN SPACE AGENCY

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.055 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

BYV52-200FYT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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