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BYV52PI-200RG

STMicroelectronics

BYV52PI-200RG by STMicroelectronics

BYV52PI-200RG by STMicroelectronics is a silicon rectifier diode designed for high efficiency applications. It features a max reverse recovery time of 0.05 µs, supports up to 30 A output current, and operates b/w -40 °C to 150 °C. Ideal for power management in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,711 parts In-Stock

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Anansix

USA . 2,359 parts In-Stock

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2,359

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Digiode

USA . 1,926 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 116 parts In-Stock

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116

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IDEA Electronic Components Group

UK . 577 parts In-Stock

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$0.103

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-

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$0.093

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577

$0.103

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$0.093

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MKK Technologies

India . 1,703 parts In-Stock

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$0.194

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1,703

$0.194

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DigiPath Technology Company

USA . 1,703 parts In-Stock

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$0.194

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$0.194

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AZTECH Wire

Italy . 835 parts In-Stock

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$14.870

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835

$14.870

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Native Components

USA . 940 parts In-Stock

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$412.850

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$404.593

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$400.465

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$396.336

940

$412.850

$404.593

$400.465

$396.336

Northwest PG Solutions

USA . 478 parts In-Stock

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$454.135

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478

$454.135

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Corphita

USA . 4,992 parts In-Stock

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Parana Technologies

USA . 2,269 parts In-Stock

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$0.123

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$0.123

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Overview

Unlock unparalleled efficiency and reliability with the BYV52PI-200RG from STMicroelectronics. Crafted with precision, this rectifier diode excels in demanding applications, ensuring optimal performance even in extreme temperatures. Benefit from STMicroelectronics' legacy of innovation and quality, empowering your designs with robust solutions that enhance longevity and reduce downtime. Elevate your projects today and experience the superior value and peace of mind that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides excellent insulation properties, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration is ideal for applications requiring efficient rectification and simplified circuit design.

Maximum Reverse Recovery Time: 0.05 µs

A fast reverse recovery time improves switching efficiency, minimizing energy losses in high-speed applications.

Maximum Reverse Current: 25 µA

Low reverse current contributes to energy efficiency, making it suitable for battery-powered and sensitive electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier mounting and integration into compact circuit designs.

No. of Terminals: 3

Three terminals provide versatile connection options, enhancing the ease of integration into various circuit layouts.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation, reducing the risk of mechanical failure in demanding environments.

Application: EFFICIENCY

Designed for high efficiency, this product is ideal for applications where power conservation is critical.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode performs reliably even in harsh environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures reliable performance in extreme conditions, suitable for outdoor and industrial applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, enhancing longevity in applications.

Terminal Position: SINGLE

Single terminal positioning simplifies design and assembly, making it easier for engineers to work with.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits in multi-device configurations.

Maximum Power Dissipation: 45 W

A high power dissipation rating means this diode can handle substantial energy loads without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), making it essential for power conversion applications.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop contributes to energy efficiency, reducing heat generation in power applications.

Maximum Output Current: 30 A

A high output current capability allows it to be used in powerful applications requiring substantial current flow.

Technology: AVALANCHE

Avalanche technology enhances the reliability of the diode under high reverse voltage conditions, improving circuit protection.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and makes it suitable for high-stress applications.

No. of Elements: 2

Two elements offer enhanced performance and the flexibility to handle various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 200 V

High peak reverse voltage capability ensures it can withstand voltage spikes, making it reliable for power management.

Maximum Non-Repetitive Peak Forward Current: 500 A

Very high surge current capacity allows for handling transient loads effectively, enhancing durability in high-demand scenarios.

Diode Element Material: SILICON

Silicon material is known for its excellent electrical properties and reliability in high-temperature environments.

Technical Specifications

Diodes & Rectifiers BYV52PI-200RG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

45 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYV52PI-200RG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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