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BYV52-200

STMicroelectronics

BYV52-200 by STMicroelectronics

BYV52-200 by STMicroelectronics is a common cathode diode with 2 elements. It has a max reverse recovery time of 0.05 us and can handle up to 30A output current. Ideal for efficiency applications, it operates b/w -40 to 150 °C temperature range.

Median Price

$12.175

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 11,987 parts In-Stock

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Digiode

USA . 3,297 parts In-Stock

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Anansix

USA . 2,286 parts In-Stock

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EMSNET

USA . 1,723 parts In-Stock

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Pegasus Components GmbH

Germany . 480 parts In-Stock

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Lakeland Logistics Inc

USA . 248 parts In-Stock

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Bristol Electronics

USA . 248 parts In-Stock

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ECAB

Sweden . 184 parts In-Stock

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First Choice Components Inc.

USA . 162 parts In-Stock

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J2 Sourcing AB

Sweden . 60 parts In-Stock

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Sinequanon

UK . 60 parts In-Stock

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IBS Electronics

USA . 49 parts In-Stock

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$12.175

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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Speed Components Ltd

Israel . 29 parts In-Stock

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Carlin Systems, Inc.

USA . 15 parts In-Stock

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LittleDiode

UK . 7 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 119 parts In-Stock

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$0.112

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$0.107

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Northwest PG Solutions

USA . 225 parts In-Stock

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$0.123

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$0.109

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IDEA Electronic Components Group

UK . 14 parts In-Stock

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$0.165

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$0.148

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MKK Technologies

India . 2,078 parts In-Stock

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$0.310

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DigiPath Technology Company

USA . 2,078 parts In-Stock

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AZTECH Wire

Italy . 713 parts In-Stock

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$19.590

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Corphita

USA . 1,831 parts In-Stock

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Parana Technologies

USA . 1,172 parts In-Stock

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$0.197

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

UK . 110 parts In-Stock

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Overview

Experience the exceptional quality and reliability of the BYV52-200 diode by STMicroelectronics, a leading manufacturer in the industry of Diodes & Rectifiers. This innovative product boasts a common cathode configuration with two elements, offering customers optimized efficiency and performance. Ideal for a wide range of applications, this diode provides a maximum output current of 30A and a maximum repetitive peak reverse voltage of 200V. Trust STMicroelectronics to deliver cutting-edge technology and superior products that exceed expectations. Elevate your projects with the BYV52-200 diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the diodes, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time allows for efficient switching and reduces power loss in the circuit.

Maximum Power Dissipation: 46 W

High power dissipation capacity makes this diode suitable for applications where high power handling is required.

Maximum Output Current: 30 A

High output current capability enables the diode to handle large amounts of current without overheating.

Technology: AVALANCHE

Avalanche technology ensures reliable operation and protection against voltage spikes, making this diode ideal for demanding applications.

Technical Specifications

Diodes & Rectifiers BYV52-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

46 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BYV52-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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