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BYV52-200FY1

STMicroelectronics

BYV52-200FY1 by STMicroelectronics

BYV52-200FY1 by STMicroelectronics is a medium voltage fast recovery rectifier diode with a max reverse recovery time of 0.055 µs and peak reverse voltage of 200 V. It features a metal flange mount package and operates up to 150 °C. Ideal for high-efficiency applications, it supports isolated case connections.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,739 parts In-Stock

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Vyrian

USA . 4,388 parts In-Stock

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Anansix

USA . 1,042 parts In-Stock

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1,042

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IDEA Electronic Components Group

UK . 2,339 parts In-Stock

1+ parts

$0.115

100+ parts

-

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$0.104

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2,339

$0.115

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$0.104

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MKK Technologies

India . 86 parts In-Stock

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$0.216

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86

$0.216

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DigiPath Technology Company

USA . 86 parts In-Stock

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$0.216

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86

$0.216

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Ampacity Inc.

Singapore . 363 parts In-Stock

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$1.010

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363

$1.010

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Corphita

USA . 3,249 parts In-Stock

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Northwest PG Solutions

USA . 1,056 parts In-Stock

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Native Components

USA . 466 parts In-Stock

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466

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Parana Technologies

USA . 231 parts In-Stock

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$0.138

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$0.138

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Overview

Unlock exceptional performance with the BYV52-200FY1 diode by STMicroelectronics, a leader in semiconductor innovation. Designed for medium voltage fast recovery applications, this robust and reliable rectifier diode enhances efficiency while ensuring long-lasting durability in demanding environments. With its superior quality and advanced avalanche technology, you can trust STMicroelectronics to deliver unmatched value and reliability in your designs. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent thermal conductivity, ensuring efficient heat dissipation during operation.

Config: SINGLE

A single configuration simplifies integration into circuits, making it a versatile choice for various applications.

Maximum Reverse Recovery Time: 0.055 us

The fast reverse recovery time enhances switching efficiency, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 25 uA

Low reverse current ensures reduced leakage and improved overall efficiency in circuit performance.

Package Shape: SQUARE

The square package shape allows for effective use of space on PCBs, optimizing layout possibilities in designs.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and contribute to more complex circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates secure installation and robust connections, enhancing reliability in various environments.

Application: MEDIUM VOLTAGE FAST RECOVERY

Designed for medium voltage fast recovery applications, this diode provides reliable performance in demanding conditions.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures protects against thermal-related failures, expanding application possibilities.

Terminal Position: SINGLE

A single terminal position simplifies circuit layout and compatibility with standard components.

Case Connection: ISOLATED

Isolated case connection enhances safety and minimizes the risk of short circuits in high-voltage applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop improves circuit efficiency by minimizing energy loss during operation.

Technology: AVALANCHE

Avalanche technology contributes to robust performance under high voltage conditions, ideal for demanding applications.

Terminal Form: PIN/PEG

This terminal form allows for easy integration into various circuit designs while ensuring stable connections.

Maximum Repetitive Peak Reverse Voltage: 200 V

High peak reverse voltage capability permits use in demanding environments, providing durability and reliability.

Maximum Non-Repetitive Peak Forward Current: 400 A

A high peak forward current rating ensures robustness, enabling the diode to handle significant load without failure.

Diode Element Material: SILICON

Silicon as the diode element material ensures good conductivity and performance, making it a standard choice for power applications.

Technical Specifications

Diodes & Rectifiers BYV52-200FY1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

MEDIUM VOLTAGE FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

TO-254AA

JESD-30 Code:

S-MSFM-P3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.055 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

BYV52-200FY1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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