Loading...

BYV52PI-50

STMicroelectronics

BYV52PI-50 by STMicroelectronics

BYV52PI-50 by STMicroelectronics is a common cathode diode with 2 elements. It has a max reverse recovery time of 0.05 us and a max output current of 30 A. Ideal for efficiency applications, it operates b/w -40 to 150 °C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 1,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,124

-

-

-

-

Vyrian

USA . 961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

961

-

-

-

-

Anansix

USA . 230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

230

-

-

-

-

Digiode

USA . 140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

140

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,045 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

$0.100

10k+ parts

-

1,045

$0.111

-

$0.100

-

MKK Technologies

India . 519 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

519

$0.209

-

-

-

DigiPath Technology Company

USA . 519 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

519

$0.209

-

-

-

Native Components

USA . 606 parts In-Stock

1+ parts

$0.670

100+ parts

-

1k+ parts

-

10k+ parts

-

606

$0.670

-

-

-

Northwest PG Solutions

USA . 682 parts In-Stock

1+ parts

$0.737

100+ parts

-

1k+ parts

-

10k+ parts

-

682

$0.737

-

-

-

Corphita

USA . 2,341 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,341

-

-

-

-

Parana Technologies

USA . 2,111 parts In-Stock

1+ parts

-

100+ parts

$0.133

1k+ parts

-

10k+ parts

-

2,111

-

$0.133

-

-

Overview

Unleash the power of efficiency with the BYV52PI-50 by STMicroelectronics. Crafted with precision and quality, this diode & rectifier is designed to exceed expectations in various applications. With a common cathode configuration and fast reverse recovery time, customers can trust in its reliable performance. Whether you're looking to enhance power conversion or improve circuit efficiency, the BYV52PI-50 offers unmatched value and benefits. Trust STMicroelectronics for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and voltage regulation in electronic circuits.

Maximum Reverse Recovery Time: 0.05 us

The low reverse recovery time ensures fast switching speed and reduces power loss, leading to improved efficiency in applications.

Maximum Reverse Current: 25 uA

The low reverse current minimizes leakage and improves the overall performance and reliability of the diodes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration and installation in electronic devices and systems.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diodes to the circuit and enables precise control of current flow.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diodes can withstand harsh environmental conditions and maintain performance under heat stress.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in cold environments, making the diodes versatile for various applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and reduces the complexity of circuit design.

Case Connection: ISOLATED

The isolated case connection enhances safety by preventing electrical shock and interference in the circuit.

Maximum Power Dissipation: 45 W

With a high power dissipation capability, the diodes can handle high wattage and operate efficiently without overheating.

Diode Type: RECTIFIER DIODE

As rectifier diodes, these products are specifically designed for converting alternating current (AC) to direct current (DC) with high efficiency.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop ensures minimal power loss and efficient energy conversion in rectification applications.

Maximum Output Current: 30 A

With a high output current rating, these diodes can handle large electrical loads and deliver continuous performance in power circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure mounting on circuit boards and provides mechanical stability during operation.

No. of Elements: 2

Having 2 elements in the diode structure enhances current handling capacity and improves overall performance in power applications.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high repetitive peak reverse voltage rating allows the diodes to withstand reverse voltage spikes and protect sensitive components in the circuit.

Maximum Non Repetitive Peak Forward Current: 500 A

The high non-repetitive peak forward current capability ensures reliable operation under transient conditions and safeguards the diodes from overcurrent events.

Diode Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high thermal conductivity and electrical properties, making it ideal for diode applications.

Technical Specifications

Diodes & Rectifiers BYV52PI-50 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

45 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

25 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYV52PI-50 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19