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BUV41

STMicroelectronics

BUV41 by STMicroelectronics

STMicroelectronics' BUV41 is a NPN Power BJT with 200V VCE, 15A IC, and 1.2V VCEsat. Ideal for switching applications, it has a max power dissipation of 120W and operates up to 200 °C. The transistor comes in a round package with flange mount style and tin lead finish for collector connection.

Median Price

$6.190

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$6.190

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Vyrian

USA . 3,122 parts In-Stock

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Digiode

USA . 2,437 parts In-Stock

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Anansix

USA . 1,523 parts In-Stock

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Sinequanon

UK . 30 parts In-Stock

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Manotoh

Italy . 25 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,687 parts In-Stock

1+ parts

$0.566

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$0.509

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1,687

$0.566

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$0.509

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MKK Technologies

India . 327 parts In-Stock

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$1.064

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DigiPath Technology Company

USA . 327 parts In-Stock

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$1.064

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Corphita

USA . 2,943 parts In-Stock

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Northwest PG Solutions

USA . 1,735 parts In-Stock

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Parana Technologies

USA . 1,509 parts In-Stock

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$0.676

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1,509

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$0.676

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Native Components

USA . 679 parts In-Stock

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Overview

Unlock the power of efficient switching with the STMicroelectronics BUV41 Power Bipolar Junction Transistor. Manufactured by a trusted industry leader, this NPN transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, from industrial automation to consumer electronics, the BUV41 provides exceptional performance with a maximum VCEsat of 1.2V and a maximum collector current of 15A. Say goodbye to power management challenges and hello to seamless operation with the BUV41.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity and durability, making it suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are easy to control, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in power control.

Maximum VCEsat: 1.2 V

Low VCEsat voltage results in reduced power dissipation and improved efficiency in switching operations.

Package Shape: ROUND

Round package shape allows for easy mounting and handling in various applications.

Terminal Form: PIN/PEG

Pin/peg terminal form provides secure connections and ease of installation.

No. of Terminals: 2

Two terminals simplify the connection process and reduce the risk of wiring errors.

Maximum Power Dissipation (Abs): 120 W

High power dissipation capability makes this transistor suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and efficient heat dissipation.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 200 V

High collector-emitter voltage rating provides versatility in voltage control applications.

Transistor Element Material: SILICON

Silicon material in the transistor element offers high performance and reliability in switching operations.

Maximum Collector Current (IC): 15 A

High maximum collector current rating allows for handling of large currents in power switching.

Maximum Turn Off Time (toff): 1500 ns

Quick turn-off time ensures efficient switching and minimal power loss during operation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and installation in various systems.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and ensures reliable performance in high power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV41 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

120 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1500 ns

Maximum VCEsat:

1.2 V

Trade Compliance

BUV41 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-409-0458, 5961014090458

NIIN

014090458

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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